BD949F ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc Silicon NPN Power Transistor BD949F/951F/953F/955F
DESCRIPTION
- DC Current Gain- : h FE = 40(Min)@ I C = 500mA
- Complement to Type BD950F/952F/954F/956F
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T a =25 SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base V oltage BD949F V BD951F BD953F 100 BD955F 120 V CEO Collector-Emitter V oltage BD949F V BD951F BD953F 100 BD955F 120 V EBO Emitter-Base Voltage 5 V I C Collector Current-Continuous 5 A I CM Collector Current-Peak 8 A P C Collector Power Dissipation @ T C =25℃ 22 W T J Junction Temperature 150 ℃ T stg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to Case 8.12 ℃/W
isc website：www.iscsemi.cn isc Silicon NPN Power Transistor BD949F/951F/953F/955F
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V CEO(SUS) Collector-Emitter Sustaining Voltage BD949F I C = 100mA ; I B = 0 V BD951F 80 BD953F 100 BD955F 120 V CE( sat Collector-Emitter Saturation Voltage I C = 2A; I B = 0.2A 1.0 V V BE( on Base-Emitter On Voltage I C = 2A; V CE = 4V 1.4 V I CBO Collector Cutoff Current V CB = V CBOmax ; I E = 0 V CB V CBOmax ; I E = 0,T J =150℃ 0.05 1 mA I CEO Collector Cutoff Current V CE V CEOmax ; I B = 0 0.1 mA I EBO Emitter Cutoff Current V EB = 5V; I C = 0 0.2 mA h FE-1 DC Current Gain I C = 500mA ; V CE = 4V 40 h FE-2 DC Current Gain I C = 2A ; V CE = 4V 20 f T Current-Gain—Bandwidth Product I C = 500mA ; V CE = 4V 3 MHz Switching Times t on Turn-On Time I C = 1.0A; I = -I = 0.1A 0.3 μs t off Turn-Off Time 1.5 μs