BD951 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD951
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 80V(Min)
- DC Current Gain- : h FE= 40(Min)@ IC= 500mA
- Complement to Type BD952
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD951
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 4V 1.4 V VCB= 80V; IE= 0 50 μA ICBO Collector Cutoff Current VCB= 40V; IE= 0,TJ=150℃ 1.0 mA ICEO Collector Cutoff Current VCE= 40V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 500mA ; VCE= 4V 40 hFE-2 DC Current Gain IC= 2A ; VCE= 4V 20 fT Current-Gain—Bandwidth Product IC= 500mA ; VCE= 4V 3 MHz Switching Times ton Turn-On Time 0.3 μs toff Turn-Off Time IC= 1.0A; IB1= -IB2= 0.1A; VCC= 20V; RL= 20Ω 1.5 μs isc Website：www.iscsemi.cn 2