BD950F ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD950F/952F/954F/956F
DESCRIPTION
- DC Current Gain- : h FE= 40(Min)@ IC= -500mA
- Complement to Type BD949F/951F/953F/955F
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD950F -60 BD952F -80 BD954F -100 VCBO Collector-Base Voltage BD956F -120 V BD950F -60 BD952F -80 BD954F -100 VCEO Collector-Emitter Voltage BD956F -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A PC Collector Power Dissipation @ TC=25℃ 22 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.12 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD950F/952F/954F/956F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD950F -60 BD952F -80 BD954F -100 VCEO(SUS) Collector-Emitter Sustaining Voltage BD956F IC= -100mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -4V -1.4 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 VCB= 1/2VCBOmax; IE= 0,TJ=150℃ -0.05 -1 mA ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -500mA ; VCE= -4V 40 hFE-2 DC Current Gain IC= -2A ; VCE= -4V 20 fT Current-Gain—Bandwidth Product IC= -500mA ; VCE= -4V 3 MHz Switching Times ton Turn-On Time 0.3 μs toff Turn-Off Time IC= -1.0A; IB1= -IB2= -0.1A 1.5 μs isc Website：www.iscsemi.cn 2