BD950 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc Silicon PNP Power Transistor BD950
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO = -60V(Min)
- DC Current Gain- : h FE = 40(Min)@ I C = -500mA
- Complement to Type BD949
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(T a =25 SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base V oltage -60 V V CEO Collector-Emitter V oltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current-Continuous -5 A I CM Collector Current-Peak -8 A P C Collector Power Dissipation @ T C =25℃ 40 W T J Junction Temperature 150 ℃ T stg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to Case 3.12 ℃/W R th j-a Thermal Resistance,Junction to Ambient 70 ℃/W
isc website：www.iscsemi.cn isc Silicon PNP Power Transistor BD950
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V (BR)CEO Collector-Emitter Breakdown Voltage I C = -1mA ; I B = 0 -60 V V (BR)CBO Collector-Base Breakdown V oltage I C = -1mA ; I E = 0 -60 V V (BR)EBO Emitter-Base Breakdown Voltage I E = -1mA ; I C = 0 -5 V V CE( sat Collector-Emitter Saturation Voltage I C = -2A; I B = -0.2A -1.0 V V BE( on Base-Emitter On Voltage I C = -2A; V CE = -4V -1.4 V I CBO Collector Cutoff Current V CB = -60V; I E = 0 -50 μA V CB = -30V; I E = 0,T J =150℃ -1.0 mA I CEO Collector Cutoff Current V CE = -30V; I B = 0 -0.1 mA I EBO Emitter Cutoff Current V EB = -5V; I C = 0 -0.2 mA h FE-1 DC Current Gain I C = -500mA ; V CE = -4V 40 h FE-2 DC Current Gain I C = -2A ; V CE = -4V 20 f T Current-Gain—Bandwidth Product I C = -500mA ; V CE = -4V 3 MHz Switching Times t on Turn-On Time I C = -1.0A; I = -I = -0.1A; V CC = -20V; R L = 20Ω 0.1 μs t off Turn-Off Time 0.4 μs