BD944F ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD944F/946F/948F
DESCRIPTION
- DC Current Gain- : h FE= 85(Min)@ IC= -500mA
- Complement to Type BD943F/945F/947F
APPLICATIONS
- Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD944F -22 BD946F -32 VCBO Collector-Base Voltage BD948F -45 V BD944F -22 BD946F -32 VCEO Collector-Emitter Voltage BD948F -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB B Base Current-Continuous -1 A PC Collector Power Dissipation @ TC=25℃ 22 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7.93 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD944F/946F/948F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD944F -22 BD946F -32 VCEO(SUS) Collector-Emitter Sustaining Voltage BD948F IC= -100mA ; IB= 0 -45 V BD944F/946F IC= -2A; IB= -0.2A B -0.5 VCE(sat) Collector-Emitter Saturation Voltage BD948F IC= -3A; IB= -0.3A B -0.7 V BD944F/946F IC= -2A; VCE= -1V -1.1 VBE(on) Base-Emitter On Voltage BD948F IC= -3A; VCE= -1V -1.3 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ -0.05 -1 mA BD944F VCE= -15V; IB= 0 B BD946F VCE= -20V; IB= 0 BICEO Collector Cutoff Current BD948F VCE= -25V; IB= 0 B -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -10mA ; VCE= -5V 25 hFE-2 DC Current Gain IC= -500mA ; VCE= -1V 85 475 BD944F/946F 50 hFE-3 DC Current Gain BD948F IC= -2A ; VCE= -1V hFE-4 DC Current Gain--Only For BD948F IC= -3A ; VCE= -1V 30 fT Current-Gain—Bandwidth Product IC= -250mA ; VCE= -1V 3 MHz isc Website：www.iscsemi.cn 2