BD933F ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F
DESCRIPTION
- DC Current Gain- : h FE= 40(Min)@ IC= 150mA
- Complement to Type BD934F/936F/938F/940F/942F
APPLICATIONS
- Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD933F 45 BD935F 60 BD937F 100 BD939F 120 VCBO Collector-Base Voltage BD941F 140 V BD933F 45 BD935F 60 BD937F 80 BD939F 100 VCEO Collector-Emitter Voltage BD941F 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 7 A IB B Base Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 19 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD933F 45 BD935F 60 BD937F 80 BD939F 100 VCEO(SUS) Collector-Emitter Sustaining Voltage BD941F IC= 100mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 0.6 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 2V 1.3 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ 0.1 3.0 mA ICEO Collector Cutoff Current VCE= VCEOmax; IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 150mA ; VCE= 2V 40 250 hFE-2 DC Current Gain IC= 1A ; VCE= 2V 25 fT Current-Gain—Bandwidth Product IC= 250mA ; VCE= 10V 3 MHz Switching Times ton Turn-On Time 0.4 1.0 μs toff Turn-Off Time IC= 1.0A; IB1= -IB2= 0.1A 1.5 3.0 μs isc Website：www.iscsemi.cn 2