BD934 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD934/936/938/940/942
DESCRIPTION
- DC Current Gain- : h FE= 40(Min)@ IC= -150mA
- Complement to Type BD933/935/937/939/941
APPLICATIONS
- Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD934 -45 BD936 -60 BD938 -100 BD940 -120 VCBO Collector-Base Voltage BD942 -140 V BD934 -45 BD936 -60 BD938 -80 BD940 -100 VCEO Collector-Emitter Voltage BD942 -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -7 A IB B Base Current-Continuous -0.5 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD934/936/938/940/942
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD934 -45 BD936 -60 BD938 -80 BD940 -100 VCEO(SUS) Collector-Emitter Sustaining Voltage BD942 IC= -100mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.6 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V -1.3 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ -0.05 -1 mA ICEO Collector Cutoff Current VCE= VCEOmax; IB= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -150mA ; VCE= -2V 40 250 hFE-2 DC Current Gain IC= -1A ; VCE= -2V 25 fT Current-Gain—Bandwidth Product IC= -250mA ; VCE= -10V 3 MHz Switching Times ton Turn-On Time 0.2 0.6 μs toff Turn-Off Time IC= -1.0A; IB1= -IB2= -0.1A 0.7 2.4 μs isc Website：www.iscsemi.cn 2