BD908 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD908 isc Website：www.iscsemi.cn
DESCRIPTION
- DC Current Gain - : hFE = 40@ IC= -0.5A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= -60V(Min)
- Complement to Type BD907
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A IB B Base Current -5 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.38 ℃/W
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD908
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A -3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -2.5A -2.5 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V -1.5 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -0.5 mA ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -4V 40 250 hFE-2 DC Current Gain IC= -5A; VCE= -4V 15 150 hFE-3 DC Current Gain IC= -10A ; VCE= -4V 5 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V; ftest= 1.0MHz 3.0 MHz isc Website：www.iscsemi.cn 2