BD905 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD905
DESCRIPTION
- DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 45V(Min)
- Complement to Type BD906
APPLICATIONS
- Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB B Base Current 5 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.38 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD905
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 B 45 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2.5A 2.5 V VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 4V 1.5 V ICBO Collector Cutoff Current VCB= 45V; IE= 0 0.5 mA ICEO Collector Cutoff Current VCE= 30V;IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 4V 40 250 hFE-2 DC Current Gain IC= 5A; VCE= 4V 15 150 hFE-3 DC Current Gain IC= 10A; VCE= 4V 5 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V; ftest= 1.0MHz 3.0 MHz isc Website：www.iscsemi.cn 2