BD895 ISC
Document overview
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Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895/897/899/901
DESCRIPTION
- With TO-220C package
- Complement to type BD896/898/900/902
- DARLINGTON
APPLICATIONS
- For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD895 45 BD897 60 BD899 80 VCBO Collector-base voltage BD901 Open emitter 100 V BD895 45 BD897 60 BD899 80 VCEO Collector-emitter voltage BD901 Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 8 A IB Base current 300 mA TC=25℃ 70 PT Total power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895/897/899/901 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD895 45 BD897 60 BD899 80 V(BR)CEO Collector-emitter breakdown voltage BD901 IC=100mA, IB=0 100 V VCEsat Collector-emitter saturation voltage I C=3A ,IB=12mA 2.5 V VBE Base-emitter on voltage I C=3A ; VCE=3V 2.5 V BD895 VCB=45V, IE=0 TC=100℃ 0.2 2.0 BD897 VCB=60V, IE=0 TC=100℃ 0.2 2.0 BD899 VCB=80V, IE=0 TC=100℃ 0.2 2.0 ICBO Collector cut-off current BD901 VCB=100V, IE=0 TC=100℃ 0.2 2.0 mA BD895 V CE=30V, IB=0 BD897 V CE=30V, IB=0 BD899 V CE=40V, IB=0 ICEO Collector cut-off current BD901 V CE=50V, IB=0 0.5 mA IEBO Emitter cut-off current V EB=5V; IC=0 2 mA hFE DC current gain I C=3A ; VCE=3V 750 VEC Diode forward voltage I E=8A 3.5 V ton Turn-on time 1 μs toff Turn-off time IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10Ω;tp=20μs 5 μs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.79 ℃/W
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895/897/899/901 PACKAGE OUTLINE Fig.2 Outline dimensions