BD896A ISC
Document overview
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Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A
DESCRIPTION
- With TO-220C package
- Complement to type BD895A/897A/901A
- DARLINGTON
APPLICATIONS
- For use in output stages in audio equipment, general amplifier,and analogue switching
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD896A -45 BD898A -60 VCBO Collector-base voltage BD900A Open emitter -80 V BD896A -45 BD898A -60 VCEO Collector-emitter voltage BD900A Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current-DC -8 A IB Base current -300 mA TC=25℃ 70 PT Total power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ 固电半导体 INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD896A -45 BD898A -60 V(BR)CEO Collector-emitter breakdown voltage BD900A IC=-100mA, IB=0 -80 V VCEsat Collector-emitter saturation voltage I C=-4A ,IB=-16mA -2.8 V VBE Base-emitter on voltage I C=-4A ; VCE=-3V -2.5 V BD896A VCB=-45V, IE=0 TC=100℃ -0.2 -2.0 BD898A VCB=-60V, IE=0 TC=100℃ -0.2 -2.0 ICBO Collector cut-off current BD900A V CB=-80V, IE=0 TC=100℃ -0.2 -2.0 mA BD896A V CE=-30V, IB=0 BD898A V CE=-30V, IB=0 ICEO Collector cut-off current BD900A V CE=-40V, IB=0 -0.5 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -2 mA hFE DC current gain I C=-4A ; VCE=-3V 750 VEC Diode forward voltage I E=-8A -3.5 V ton Turn-on time 1 μs toff Turn-off time IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10Ω;tp=20μs 5 μs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.79 ℃/W 固电半导体 INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A PACKAGE OUTLINE Fig.2 Outline dimensions 固电半导体 INCHANGE SEMICONDUCTOR