BD843 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor BD843
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=80V(Min)
- HighDCCurrentGain
- LowSaturation Voltage
- ComplementtoType BD844
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforusein televisioncircuits andaudioapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 100 V VCEO Collector-EmitterVoltage 80 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 1.5 A ICP CollectorCurrent-Peak 3.0 A PC CollectorPowerDissipation @Ta=25℃ 2 W CollectorPowerDissipation @TC=25℃ 10 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 12.5 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 62.5 ℃/W
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor BD843 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterBreakdownVoltage IC=30mA;IB=0 80 V VCE(sat) Collector-EmitterSaturationVoltage IC=1A;IB=100mA 0.8 V VBE(on) Base-EmitterOnVoltage IC=1A;VCE=2V 1.3 V ICBO CollectorCutoffCurrent VCB=30V;IE=0 0.1 uA VCB=30V;IE=0;TC=125℃ 10 IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 uA hFE-1 DCCurrentGain IC=5mA;VCE=2V 25 hFE-2 DCCurrentGain IC=150mA;VCE=2V 40 250 hFE-3 DCCurrentGain IC=1A;VCE=2V 25 fT Current-Gain—BandwidthProduct IC=50mA;VCE=5V 125 MHz