BD808 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD808
DESCRIPTION
- DC Current Gain - : hFE =30@ IC= -2A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= -60V(Min)
- Complement to Type BD807
APPLICATIONS
- Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB B Base Current -6 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.39 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD808
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ;IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.1 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -2V -1.6 V ICBO Collector Cutoff Current VCB= -70V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC= -2A ; VCE= -2V 30 hFE-2 DC Current Gain IC= -4A ; VCE= -2V 15 fT Current-Gain—Bandwidth Product IC= -1.0A ; VCE= -10V; ftest= 1.0MHz 1.5 MHz isc Website：www.iscsemi.cn 2