BD807 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD807
DESCRIPTION
- DC Current Gain - : hFE = 30(Min.)@ IC= 2A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 60V(Min)
- Complement to Type BD808
APPLICATIONS
- Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB B Base Current 6 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.39 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD807
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.1 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 2V 1.6 V ICBO Collector Cutoff Current VCB= 70V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 2A ; VCE= 2V 30 hFE-2 DC Current Gain IC= 4A ; VCE= 2V 15 fT Current-Gain—Bandwidth Product IC= 1.0A ; VCE= 10V; ftest= 1.0MHz 1.5 MHz isc Website：www.iscsemi.cn 2