BD799 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD799
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 80V(Min)
- Low Saturation Voltage
- Complement to Type BD800
APPLICATIONS
- Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB B Base Current-Continuous 3 A PC Collector Power Dissipation TC=25℃ 65 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD799
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V 1.6 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 2V 30 hFE-2 DC Current Gain IC= 3A ; VCE= 2V 15 fT Current-Gain—Bandwidth Product IC= 0.25A ;VCE= 10V,ftest= 1MHz 3 MHz isc Website：www.iscsemi.cn