BD798 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD798
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -60V(Min)
- Low Saturation Voltage
- Complement to Type BD797
APPLICATIONS
- Designed for a wide variety of medium-powe r switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB B Base Current-Continuous -3 A PC Collector Power Dissipation TC=25℃ 65 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD798
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -2V -1.6 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA hFE-1 DC Current Gain IC= -1A ; VCE= -2V 40 hFE-2 DC Current Gain IC= -3A ; VCE= -2V 25 fT Current-Gain—Bandwidth Product IC= -0.25A ;VCE= -10V,ftest= 1MHz 3 MHz isc Website：www.iscsemi.cn