BD791 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor BD791
DESCRIPTION
- HighCollector–Emitter SustainingVoltage — VCEO(sus)=100 Vdc (Min)
- HighDCCurrentGain @IC=200mAdc hFE=40–250
- LowCollector–Emitter SaturationVoltage — VCE(sat) =0.5 Vdc (Max)@IC=500 mAdc
APPLICATIONS
- Designedforlowpoweraudio amplifierand lowcurrent, high-speedswitchingapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 100 V VCEO Collector-EmitterVoltage 100 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 4 A ICM CollectorCurrent-Peak 8 A IB BaseCurrent-Continuous 1 A PC CollectorPowerDissipation @TC=25℃ 15 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 8.34 ℃/W
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor BD791 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=10mA;IB=0 100 V VCE(sat)-1 Collector-EmitterSaturationVoltage IC=0.5A;IB=50mA 0.5 V VCE(sat)-2 Collector-EmitterSaturationVoltage IC=1A;IB=0.1A 1.0 V VCE(sat)-3 Collector-EmitterSaturationVoltage IC=2A;IB=0.2A 2.5 V VCE(sat)-4 Collector-EmitterSaturationVoltage IC=4A;IB=0.8A 3.0 V VBE(sat) Base-EmitterSaturationVoltage IC=2A;IB=0.2A 1.8 V VBE(on) Base-EmitterOnVoltage IC=0.2A;VCE=3V 1.5 V ICEX CollectorCutoffCurrent VCB=100V;VBE(off)=1.5V VCB=50V;VBE(off)=1.5V;TC=125℃ 1.0 0.1 μA mA ICEO CollectorCutoffCurrent VCE=50V;IB=0 0.1 mA IEBO EmitterCutoffCurrent VEB=6V;IC=0 1.0 μA hFE-1 DCCurrentGain IC=0.2A;VCE=3V 40 250 hFE-2 DCCurrentGain IC=1A;VCE=3V 25 hFE-3 DCCurrentGain IC=2A;VCE=3V 20 hFE-4 DCCurrentGain IC=4A;VCE=3V 5 fT Current-Gain—BandwidthProduct IC=0.1A;VCE=10V 40 MHz COB CollectorOutputCapacitance IE=0;VCB=10V;f=0.1MHz 50 pF