BD788 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD788
DESCRIPTION
- DC Current Gain- : h FE= 40~250(Min)@ IC= -0.2A
- Collector-Emitter Sustaining Voltage - : V CEO(SUS)= -60V(Min)
- Complement to type BD787
APPLICATIONS
- Designed for low power audio amplifier and low current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB B Base Current-Continuous -1 A PC Collector Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.34 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD788
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -0.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.6 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -0.8 V VCE(sat)-4 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.8A B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= 0.2A B -2.0 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -3V -1.8 V ICEX Collector Cutoff Current VCB= -80V;VBE(off)= -1.5V VCB= -40V;VBE(off)= -1.5V;TC=125℃ -1.0 -0.1 μA mA ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -0.1 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -1.0 μA hFE-1 DC Current Gain IC= -0.2A; VCE= -3V 40 250 hFE-2 DC Current Gain IC= -1A; VCE= -3V 25 hFE-3 DC Current Gain IC= -2A; VCE= -3V 20 hFE-4 DC Current Gain IC= -4A; VCE= -3V 5 fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -10V 50 MHz COB Collector Output Capacitance IE= 0; VCB= -10V; f= 0.1MHz 70 pF isc Website：www.iscsemi.cn 2