BD787 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD787
DESCRIPTION
- DC Current Gain- : h FE= 40~250(Min)@ IC= 0.2A
- Collector-Emitter Sustaining Voltage - : V CEO(SUS)= 60V(Min)
- Complement to type BD788
APPLICATIONS
- Designed for low power audio amplifier and low current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB B Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.34 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD787
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 0.6 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 0.8 V VCE(sat)-4 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 3V 1.8 V ICEX Collector Cutoff Current VCB= 80V;VBE(off)= 1.5V VCB= 40V;VBE(off)= 1.5V;TC=125℃ 1.0 0.1 μA mA ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 μA hFE-1 DC Current Gain IC= 0.2A; VCE= 3V 40 250 hFE-2 DC Current Gain IC= 1A; VCE= 3V 25 hFE-3 DC Current Gain IC= 2A; VCE= 3V 20 hFE-4 DC Current Gain IC= 4A; VCE= 3V 5 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 50 MHz COB Collector Output Capacitance IE= 0; VCB= 10V; f= 0.1MHz 50 pF isc Website：www.iscsemi.cn 2