BD751 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A
- High Power Dissipation
- Complement to Type BD750/750A
APPLICATIONS
- Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751 100 VCEV Collector-Emitter Voltage BD751A 130 V BD751 90 VCEO(SUS) Collector-Emitter Voltage BD751A 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB B Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD751 90 VCEO(SUS) Collector-Emitter Sustaining Voltage BD751A IC=100mA ; IB=0 120 V BD751 IC= 7.5A; IB= 0.75A 1.5 VCE(sat) Collector-Emitter Saturation Voltage BD751A IC= 5A; IB= 0.5A B 1.0 V BD751 IC= 7.5A; IB= 0.75A 1.8 VBE(sat) Base-Emitter Saturation Voltage BD751A IC= 5A; IB= 0.5A B 1.8 V BD751 VCEV= 100V;VBE(off)= 1.5V 0.5 ICEV Collector Cutoff Current BD751A VCEV= 130V;VBE(off)= 1.5V 0.5 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA BD751 IC= 7.5A ; VCE= 2V 15 60 hFE DC Current Gain BD751A IC= 5A ; VCE= 2V 25 100 fT Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V; ftest= 1MHz 4 MHz isc Website：www.iscsemi.cn 2