BD750B ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750B/750C
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -100V(Min)- BD751B = -130V(Min)- BD751C
- High Power Dissipation
- Complement to Type BD751B/751C
APPLICATIONS
- Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD750B -110 VCEV Collector-Emitter Voltage BD750C -140 V BD750B -100 VCEO(SUS) Collector-Emitter Voltage BD750C -130 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -20 A IB B Base Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750B/750C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD750B -100 VCEO(SUS) Collector-Emitter Sustaining Voltage BD750C IC= -100mA ; IB= 0 -130 V BD750B IC= -7.5A; IB= -0.75A B -1.5 VCE(sat) Collector-Emitter Saturation Voltage BD750C IC= -5A; IB= -0.5A B -1.0 V BD750B IC= -7.5A; IB= -0.75A B -1.8 VBE(sat) Base-Emitter Saturation Voltage BD750C IC= -5A; IB= -0.5A B -1.8 V BD750B VCEV= -110V;VBE(off)= -1.5V -0.5 ICEV Collector Cutoff Current BD750C VCEV= -140V;VBE(off)= -1.5V -0.5 mA IEBO Emitter Cutoff Current VEB= -7V; IC=0 -1.0 mA BD750B IC= -7.5A ; VCE= -2V 15 60 hFE DC Current Gain BD750C IC= -5A ; VCE= -2V 25 100 fT Current-Gain—Bandwidth Product IC= -0.5A ;VCE= -10V; ftest= 1MHz 4 MHz isc Website：www.iscsemi.cn 2