BD750 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750/750A
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A
- High Power Dissipation
- Complement to Type BD751/751A
APPLICATIONS
- Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD750 -100 VCEV Collector-Emitter Voltage BD750A -130 V BD750 -90 VCEO(SUS) Collector-Emitter Voltage BD750A -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -20 A IB B Base Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750/750A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD750 -90 VCEO(SUS) Collector-Emitter Sustaining Voltage BD750A IC= -100mA ; IB= 0 -120 V BD750 IC= -7.5A; IB= -0.75A B -1.5 VCE(sat) Collector-Emitter Saturation Voltage BD750A IC= -5A; IB= -0.5A B -1.0 V BD750 IC= -7.5A; IB= -0.75A B -1.8 VBE(sat) Base-Emitter Saturation Voltage BD750A IC= -5A; IB= -0.5A B -1.8 V BD750 VCEV= -100V;VBE(off)= -1.5V -0.5 ICEV Collector Cutoff Current BD750A VCEV= -130V;VBE(off)= -1.5V -0.5 mA IEBO Emitter Cutoff Current VEB= -7V; IC=0 -1.0 mA BD750 IC= -7.5A ; VCE= -2V 15 60 hFE DC Current Gain BD750A IC= -5A ; VCE= -2V 25 100 fT Current-Gain—Bandwidth Product IC= -0.5A ;VCE= -10V; ftest= 1MHz 4 MHz isc Website：www.iscsemi.cn 2