BD744A ISC

Document overview

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Technical content

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD744A

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- : V (BR)CEO= -60V(Min)
  • Collector Power Dissipation- : PC= 90W@ IC= 25℃
  • 15A Continuous Collector Current
  • Complement to Type BD743A

APPLICATIONS

  • Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A IB B Base Current-Continuous -5 A Collector Power Dissipation @ Ta=25℃ 2 PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website:www.iscsemi.cn

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD744A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A; IB= -5A -3.0 V VBE(on)-1 Base-Emitter On Voltage IC= -5A ; VCE= -4V -1.0 V VBE(on)-2 Base-Emitter On Voltage IC= -15A ; VCE= -4V -3.0 V VCB= -70V; IE= 0 -0.1 ICBO Collector Cutoff Current VCB= -70V; IE= 0; TC= 125℃ -5.0 mA ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.5 mA hFE-1 DC Current Gain IC= -1A ; VCE= -4V 40 hFE-2 DC Current Gain IC= -5A ; VCE= -4V 20 150 hFE-3 DC Current Gain IC= -15A ; VCE= -4V 5 Switching Times td Delay Time 20 ns tr Rise Time 120 ns ts Storage Time 600 ns tf Fall time IC= -5A; IB1= -IB2= -5A; VBE(off)= 4.2V; RL= 6Ω; tp= 20μs,DutyCycle≤ 2% 300 ns isc Website:www.iscsemi.cn 2