BD725 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD725
DESCRIPTION
- DC Current Gain- : h FE= 40@ IC= 0.5A
- Collector-Emitter Breakdown Voltage - : V (BR)CEO= 120V(Min)
- Complement to type BD726
APPLICATIONS
- Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB B Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD725
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 4V 1.4 V VCB= 120V; IE= 0 50 μA ICBO Collector Cutoff Current VCB= 60V; IE= 0; TC= 150℃ 1 mA ICEO Collector Cutoff Current VCE= 60V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 4V 40 hFE-2 DC Current Gain IC= 2A; VCE= 4V 20 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V 3 MHz Switching Times ton Turn-On time 0.3 μs toff Turn-Off time IC= 1A; IB1= -IB2= 0.1A;VCC= 20V 1.5 μs isc Website：www.iscsemi.cn 2