BD722 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD722
DESCRIPTION
- DC Current Gain- : h FE= 40@ IC= -0.5A
- Collector-Emitter Breakdown Voltage - : V (BR)CEO= -80V(Min)
- Complement to type BD721
APPLICATIONS
- Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -7 A IB B Base Current-Continuous -1 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD722
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -4V -1.4 V VCB= -80V; IE= 0 -50 μA ICBO Collector Cutoff Current VCB= -40V; IE= 0; TC= 150℃ -1 mA ICEO Collector Cutoff Current VCE= -40V; IB= 0 B -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -4V 40 hFE-2 DC Current Gain IC= -2A; VCE= -4V 20 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 3 MHz Switching Times ton Turn-On time 0.1 μs toff Turn-Off time IC= -1A; IB1= -IB2= -0.1A; VCC= -20V 0.4 μs isc Website：www.iscsemi.cn 2