BD721 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc Silicon NPN Power Transistor BD721
DESCRIPTION
- DC Current Gain- : h FE= 40@ IC= 0.5A
- Collector-Emitter Breakdown Voltage - : V (BR)CEO= 80V(Min)
- Complement to type BD722
APPLICATIONS
- Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor BD721
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage I C= 30mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage I C= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage I C= 2A; VCE= 4V 1.4 V VCB= 80V; IE= 0 50 μA ICBO Collector Cutoff Current VCB= 40V; IE= 0; TC= 150℃ 1 mA ICEO Collector Cutoff Current V CE= 40V; IB= 0 0.1 mA IEBO Emitter Cutoff Current V EB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain I C= 0.5A; VCE= 4V 40 hFE-2 DC Current Gain I C= 2A; VCE= 4V 20 fT Current-Gain—Bandwidth Product I C= 0.5A; VCE= 4V 3 MHz Switching Times ton Turn-On time 0.3 μs toff Turn-Off time IC= 1A; IB1= -IB2= 0.1A;VCC= 20V 1.5 μs