BD706 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD706
DESCRIPTION
- DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= -45V(Min.)
- Complement to Type BD705
APPLICATIONS
- Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCES Collector-Emitter Voltage VBE= 0 -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB B Base Current-Continuous -5 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD706
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0 -45 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -4V -1.5 V ICEO Collector Cutoff Current VCE= -22V; IB= 0 B -1.0 mA ICBO Collector Cutoff Current VCB= -45V; IE= 0 VCB= -45V; IE= 0; TC= 150℃ -0.1 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -2V 40 400 hFE-2 DC Current Gain IC= -2A; VCE= -2V 30 hFE-3 DC Current Gain IC= -4A; VCE= -4V 20 150 hFE-4 DC Current Gain IC= -10A; VCE= -4V 5 fT Current-Gain—Bandwidth Product IC= -0.3A; VCE= -3V 3 MHz isc Website：www.iscsemi.cn 2