BD705 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD705
DESCRIPTION
- DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 45V(Min.)
- Complement to Type BD706
APPLICATIONS
- Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCES Collector-Emitter Voltage VBE= 0 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IB B Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD705
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 45 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.5 V ICEO Collector Cutoff Current VCE= 22V; IB= 0 B 1.0 mA ICBO Collector Cutoff Current VCB= 45V; IE= 0 VCB= 45V; IE= 0; TC= 150℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 2V 40 400 hFE-2 DC Current Gain IC= 2A; VCE= 2V 30 hFE-3 DC Current Gain IC= 4A; VCE= 4V 20 150 hFE-4 DC Current Gain IC= 10A; VCE= 4V 5 fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 3V 3 MHz isc Website：www.iscsemi.cn 2