BD637 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD637
DESCRIPTION
- DC Current Gain - : hFE = 40(Min.)@ IC= 25mA
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 80V(Min.)
- Complement to Type BD638
APPLICATIONS
- Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 5 A IB B Base Current-Continuous 0.3 A Collector Power Dissipation @ Ta=25℃ 2 PC Collector Power Dissipation @ T C=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD637
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 0.6 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 2V 1.3 V ICES Collector Cutoff Current VCE= 100V; VBE= 0 0.2 mA hFE-1 DC Current Gain IC= 25mA; VCE= 2V 40 hFE-2 DC Current Gain IC= 1A; VCE= 2V 25 isc Website：www.iscsemi.cn 2