BD636 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD636
DESCRIPTION
- DC Current Gain - : hFE = 40(Min.)@ IC= -25mA
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -60V(Min.)
- Complement to Type BD635
APPLICATIONS
- Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A IB B Base Current-Continuous -0.3 A Collector Power Dissipation @ Ta=25℃ 2 PC Collector Power Dissipation @ T C=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD636
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.6 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V -1.3 V ICES Collector Cutoff Current VCE= -60V; VBE= 0 -0.2 mA hFE-1 DC Current Gain IC= -25mA; VCE= -2V 40 hFE-2 DC Current Gain IC= -1A; VCE= -2V 25 isc Website：www.iscsemi.cn 2