BD544 POINN

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BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS PRODUCT INFORMATION JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

  • Designed for Complementary Use with the BD543 Series
  • 70 W at 25°C Case Temperature
  • 8 A Continuous Collector Current
  • 10 A Peak Collector Current
  • Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. RATIN G SYMBO L VALU E UNIT Collector-base voltage (IE = 0) BD544 BD544A BD544B BD544 C V CB O -40 -60 -80 -100 V Collector-emitter voltage (I B = 0) BD544 BD544A BD544B BD544 C V CE O -40 -60 -80 -100 V Emitter-base voltage V EB O -5 V Continuous collector current IC -8 A Peak collector current (see Note 1) IC M -10 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 70 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Operating free air temperature range TA -65 to +150 °C Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds TL 260 °C

BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 199 7 PRODUCT INFORMATION NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETE R TEST CONDITION S MIN TY P MA X UNIT V (BR)CE O Collector-emitter breakdown voltage IC = -30 mA (see Note 4) IB = 0 BD544 BD544A BD544B BD544 C -40 -60 -80 -100 V I CE S Collector-emitter cut-off current V C E = -40 V V C E = -60 V V C E = -80 V V C E = -100 V V BE = 0 V BE = 0 V BE = 0 V BE = 0 BD544 BD544A BD544B BD544 C -0.4 -0.4 -0.4 -0.4 m A I CE O Collector cut-off current V C E = -30 V V C E = -60 V IB = 0 IB = 0 BD544/544A BD544B/544 C -0.7 -0.7 m A IEB O Emitter cut-off current V EB = -5 V IC = 0 -1 m A hFE Forward current transfer ratio V C E = -4 V V C E = -4 V V C E = -4 V IC = -1 A IC = -3 A IC = -5 A (see Notes 4 and 5) V CE(sat) Collector-emitter saturation voltage IB = -0.3 A IB = -1 A IB = -1.6 A IC = -3 A IC = -5 A IC = -8 A (see Notes 4 and 5) -0.5 -0.5 V VBE Base-emitter voltage V C E = -4 V IC = -5 A (see Notes 4 and 5) -1.4 V hfe Small signal forward current transfer ratio V C E = -10 V IC = -0.5 A f = 1 kHz 20 |hfe| Small signal forward current transfer ratio V C E = -10 V IC = -0.5 A f = 1 MHz 3 thermal characteristics PARAMETE R MIN TY P MA X UNIT R θJC Junction to case thermal resistance 1.79 °C/W R θJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETE R TEST CONDITIONS † MIN TY P MA X UNIT ton Turn-on time IC = -6 A V BE(off) = 4 V IB(on) = -0.6 A R L = 5 Ω IB(off) = 0.6 A tp = 20 µs, dc ≤ 2% 0.4 µs toff Turn-off time 0.7 µs

Figure 1. Figure 2.

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JUNE 1973 - REVISED MARCH 1997 BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS PRODUCT INFORMATION TO-220 3-pin plastic flange-mount packag e This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DAT A TO220 ALL LINEAR DIMENSIONS IN MILLIMETERS ø 1,23 1,32 4,20 4,70 1 2 3 0,97 0,61 see Note C see Note B 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,90 12,7 14,1 3,5 6,1 1,07 1,70 2,34 2,74 4,88 5,28 3,71 3,96 0,41 0,64 2,40 2,90 VERSION 2 VERSION 1 NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE

BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 199 7 PRODUCT INFORMATION IMPORTANT NOTIC E Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS . Copyright © 1997, Power Innovations Limited