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www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. Standard LDO Regulators Standard Fixed Output LDO Regulators with Shutdown Switch BD33C0AWFP, BD50C0AWFP

  • Description The BDXXC0AWFP Series is low-saturation regulator. This IC has a built-in over-current protec tion circuit that prevents the destruction of the IC due to output short circuits and a thermal shutdown circuit that protects the IC from thermal damage due to overloading.
  • Features 1) Output Current: 1A 2) Output Voltage: 3.3V ／5.0V 2) High Output Voltage Precision : ±1% 3) Low saturation with PDMOS output 4) Built-in over-current protection circuit that prevents the destruction of the IC due to output short circuits 5) Built-in thermal shutdown circuit for protecti ng the IC from thermal damage due to overloading 6) Low ESR Capacitor 7) TO252-5 packaging
  • Applications Audiovisual equipments, FPDs, televisions, personal computers or any other consumer device
  • Absolute maximum ratings (Ta=25℃) Parameter Symbol Ratings Unit Supply Voltage *1 Vcc -0.3 ~ +35.0 V Output Control Voltage VCTL -0.3 ~ +35.0 V Power Dissipation (TO252-5) *2 Pd 1.3 W Operating Temperature Range Topr -40 ~ +105 ℃ Storage Temperature Range Tstg -55 ~ +150 ℃ Maximum Junction Temperature Tjmax +150 ℃ *1 Not to exceed Pd. *2 TO252-5:Reduced by 10.4mW / ℃ over Ta = 25℃, when mounted on glass epoxy board: 70mm×70mm×1.6mm. NOTE : This product is not designed for protection against radioactive rays.
  • Operating conditions (Ta=25℃) Parameter Symbol Min. Max. Unit Supply Voltage Vcc Vo+1V 25.0 V Output Control Voltage VCTL 0 25.0 V Output Current Io 0 1.0 A No.11022EAT01

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP

  • Electrical characteristics ■BD33C0AWFP(Unless otherwise specified, Ta=25℃, Vcc=8.3V,VCTL=5V,Io=0mA) Parameter Symbol Min. Typ. Max. Unit Conditions Shut Down Current Isd － 0 10 µA V CTL=0V Bias Current Ib － 0.5 1.0 mA Output Voltage Vo 3.267 3.300 3.333 V Io=200mA Dropout Voltage ΔVd － 0.4 0.7 V Vcc=Vo ×0.95, Io=500mA Ripple Rejection R.R. 45 55 － dB f=120Hz,ein*1=1Vrms, Io=100mA Line Regulation Reg.I － 20 60 mV Vo+1V →25V Load Regulation Reg.L － Vo ×0.010 Vo×0.020 V Io=5mA →1A Temperature Coefficient of Output Voltage Tcvo.1 － +0.04 － %/℃ Io=5mA,Tj=-40～-20℃ CTL ON Mode Voltage VthH 2.0 － － V ACTIVE MODE CTL OFF Mode Voltage VthL － － 0.8 V OFF MODE CTL Bias Current ICTL － 25 50 µA *1 ein : Input Voltage Ripple ■BD50C0AWFP(Unless otherwise specified, Ta=25℃, Vcc=10V,VCTL=5V,Io=0mA) Parameter Symbol Min. Typ. Max. Unit Conditions Shut Down Current Isd － 0 10 µA V CTL=0V Bias Current Ib － 0.5 1.0 mA Output Voltage Vo 4.950 5.000 5.050 V Io=200mA Dropout Voltage ΔVd － 0.3 0.5 V Vcc=Vo ×0.95, Io=500mA Ripple Rejection R.R. 45 55 － dB f=120Hz,ein*1=1Vrms, Io=100mA Line Regulation Reg.I － 20 60 mV Vo+1V →25V Load Regulation Reg.L － Vo ×0.010 Vo×0.020 V Io=5mA →1A Temperature Coefficient of Output Voltage Tcvo.1 － +0.04 － %/℃ Io=5mA,Tj=-40～-20℃ CTL ON Mode Voltage VthH 2.0 － － V ACTIVE MODE CTL OFF Mode Voltage VthL － － 0.8 V OFF MODE CTL Bias Current ICTL － 25 50 µA *1 ein : Input Voltage Ripple

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP

  • Electrical characteristic curves (Reference data) ■BD33C0AWFP(Unless otherwise specified, Ta=25℃, Vcc=8.3V,VCTL=5V,Io=0mA) 100 200 300 400 500 600 700 800 0 200 400 600 800 1000 OUTPUT CURRENT： IO [mA] DROPOUT VOLTAGE ： ΔVd [mV] 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 SUPPLY VOLTAGE： Vcc [V] OUTPUT VOLTAGE : Vo [V] 100 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 CONTROL VOLTAGE： V CTL[V] CIRCUIT CURRENT ： I CTL[µA] 0.0 0.2 0.4 0.6 0.8 1.0 0 200 400 600 800 1000 OUTPUT CURRENT： Io [mA] CIRCUIT CURRENT： Ib+IFEEDBACK_R [mA] 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 CONTROL VOLTAGE： V CTL[V] OUTPUT VOLTAGE ： Vo [V] 130 140 150 160 170 180 190 AMBIENT TEMPERATURE： Ta [℃] OUTPUT VOLTAGE ： Vo [V] 0 400 800 1200 1600 2000 OUTPUT CURRENT： IO[mA] OUTPUT VOLTAGE ： Vo [V] 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 SUPPLY VOLTAGE： Vcc [V] OUTPUT VOLTAGE ： Vo [V] -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE： Ta[℃] OUTPUT VOLTAGE ： Vo [V] 0.0 0.2 0.4 0.6 0.8 1.0 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 SUPPLY VOLTAGE： Vcc [V] CIRCUIT CURRENT ： Ib+IFEEDBACK_R [mA] 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 SUPPLY VOLTAGE： Vcc [V] STANBY CURRENT： Isd [µA] 10 100 1000 10000 100000 1000000 FREQUENCY： f [Hz] RIPPLE REJECTION ： R.R. [dB] Fig.7 Ripple Rejection (lo=100mA) Fig.12 Thermal Shutdown Circuit Characteristics Fig.1 Circuit Current Fig.2 Shut Down Current Fig.3 Line Regulation (Io=0mA) Fig.4 Line Regulation (Io=500mA) Fig.5 Load Regulation Fig.6 Dropout Voltage (Vcc=Vo×0.95V) (lo=0mA→1000mA) Fig.8 Output Voltage Temperature Characteristics Fig.10 CTL Voltage vs CTL Current Fig.11 CTL Voltage vs Output Voltage Fig.9 Circuit Current (lo=0mA→1000 mA)

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP

  • Electrical characteristic curves (Reference data) ■BD50C0AWFP (Unless otherwise specified, Ta=25℃, Vcc=10V,VCTL=5V,Io=0mA) 100 200 300 400 500 600 0 200 400 600 800 1000 OUTPUT CURRENT： IO [mA] DROPOUT VOLTAGE ： ?Vd [mV] 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 SUPPLY VOLTAGE: Vcc [V] OUTPUT VOLTAGE : Vo [V] 100 0 2 4 6 8 10 12 14 16 18 20 22 24 CONTROL VOLTAGE： VCTL[V] CIRCUIT CURRENT: I CTL[µA] 0.0 0.2 0.4 0.6 0.8 1.0 0 200 400 600 800 1000 OUTPUT CURRENT： Io [mA] CIRCUIT CURRENT： Ib+IFEED BAC K_R [mA] - 4 0 - 2 00 2 04 06 08 0 1 0 0 AMBIENT TEMPERATURE： Ta[℃] OUTPUT VOLTAGE ： Vo [V] 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 CONTROL VOLTAGE： VCTL[V] OUTPUT VOLTAGE ： Vo [V] 130 140 150 160 170 180 190 AMBIENT TEMPERATURE： Ta [℃] OUTPUT VOLTAGE ： Vo [V] 0 400 800 1200 1600 2000 OUTPUT CURRENT： IO[mA] OUTPUT VOLTAGE ： Vo [V] 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 SUPPLY VOLTAGE: Vcc [V] OUTPUT VOLTAGE : Vo [V] 0.0 0.2 0.4 0.6 0.8 1.0 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 SUPPLY VOLTAGE： Vcc [V] CIRCUIT CURRENT: Ib+IFEEDBACK_R [mA] 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 SUPPLY VOLTAGE： Vcc [V] STANBY CURRENT： Isd [µA] 10 100 1000 10000 100000 1000000 FREQUENCY ： f [Hz] RIPPLE REJECTION ： R.R. [dB] Fig.19 Ripple Rejection (lo=100mA) Fig.24 Thermal Shutdown Circuit Characteristics Fig.13 Circuit Current Fig.14 Shut Down Current Fig.15 Line Regulation (Io=0mA) Fig.16 Line Regulation (Io=500mA) Fig.17 Load Regulation Fig.18 Dropout Voltage (Vcc=Vo×0.95V) (lo=0mA→1000mA) Fig.20 Output Voltage Temperature Characteristics Fig.22 CTL Voltage vs CTL Current Fig.23 CTL Voltage vs Output Voltage Fig.21 Circuit Current (lo=0mA→1000 mA)

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP

  • Measurement circuit for reference data Measurement circuit for reference data ■BDXXC0AWFP ( ):Vo=5.0V Measurement Circuit of Fig.1 and Fig.13 V A Vcc CTL GND Vo 1μF A Vcc CTL GND Vo Vcc CTL GND Vo Vcc CTL GND Vo Vcc CTL GND Vo Vcc CTL GND Vo Vcc CTL GND Vo Vcc CTL GND Vo Vcc CTL GND Vo Vcc CTL GND Vo 10V Vcc CTL GND Vo 10V Vcc CTL GND Vo V V 500mA A A 4.75V V 100mA 10V 10V A A 10V V 10V 10V 1Vrms 1μF 1μF 1μF 1μF 1μF 1μF 1μF 1μF 1μF V 1μF V 1μF N.C. N.C. N.C. (1.0μF) 2.2μF (1.0μF) 2.2μF (1.0μF) 2.2μF (1.0μF) 2.2μF (1.0μF) 2.2μF (1.0μF) 2.2μF (1.0μF) 2.2μF (1.0μF) 2.2μF (1.0μF) 2.2μF (1.0μF) 2.2μF (1.0μF) 2.2μF (1.0μF) 2.2μF Measurement Circuit of Fig.2 and Fig.14 Measurement Cir cuit of Fig.3 and Fig.15

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP

  • Block Diagrams Pin No. Pin Name Function

1 CTL Output Control Pin

2 Vcc Power Supply Pin

3 N.C. N.C. Pin

4 Vo Output Pin

5 N.C. N.C. Pin Fin GND GND

  • TOP VIEW〈Package dimension〉 Fig.25 N.C. CTL Vo GND N.C. Vcc FIN TSD VREF OCP 2 1 4 3 5 R1,R2:Feed back Resister Driver VREF:Bandgap Reference OCP:Over Current Protection Circuit TSD:Thermal Shut Down Circuit Driver:Power Transistor Driver

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP Vcc IC 200kΩ 200kΩ CTL 1kΩ Vo Vcc 34kΩ(BD33C0AWFP) 56.6kΩ(BD50C0AWFP) 10kΩ

  • Input / Output Equivalent Circuit Diagrams CTL Pin Vo Pin Vcc Pin 15 kΩ

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP

  • Thermal Design Fig.26 Fig.27(Reference data) When using at temperatures over Ta=25℃, please refer to the heat reducing characteristics shown in Fig.26 and Fig.27. The IC characteristics are closely related to the temperature at which the IC is used, so it is necessary to operate the IC at temperatures less than the maximum junction temperature Tjmax. Fig.26 and Fig.27 shows the acceptable loss and heat reduci ng characteristics of the TO252-5 package. Even when the ambient temperature Ta is a normal temperature (25 ℃), the chip (junction) temperatur e Tj may be quite high so please operate the IC at temperatures less than the acceptable loss Pd. The calculation method for power consumption Pc(W) is as follows :(Fig.27③) Pc=(Vcc－Vo)×Io+Vcc×Ib Acceptable loss Pd≧Pc Solving this for load current Io in order to operate within the acceptable loss, It is then possible to find the maximum load current Io Max with respect to the applied voltage Vcc at the time of thermal design. Calculation Example) When Ta=85℃ BD33C0AWFP:Vcc=8.3V,Vo=3.3V BD50C0AWFP:Vcc=10V,Vo=5.0V Please refer to the above information and keep thermal desig ns within the scope of acceptable loss for all operating temperature ranges. The power consumption Pc of the IC when there is a short circuit (short between Vo and GND) is : Pc=Vcc×(Ib+Ishort) Io≦ Pd－Vcc×Ib Vcc－Vo Vcc: Vo: Io: Ib: Ishort: Input voltage Output voltage Load current Circuit current Short current Fig.27③:θja=26.0℃ /W → -38.4mW/℃ Io≦ 2.496－10×Ib Io≦498.2mA (Ib:0.5mA) 0 25 50 75 100 125 150 AM BIENT TEM PERATURE:Ta[℃] POWER DISSIPATON:Pd[W] 1.30 Mounted on a Rohm standard board Board size : 70 ㎜×70 ㎜×1.6 ㎜ Copper foil area :7 ㎜×7 ㎜ TO252-5θja=96.2(℃/W) 0 25 50 75 100 125 150 AM BIENT TEM PERATURE:Ta[℃] POWER DISSIPATON:Pd[W] ①1.85 ②3.50 ③4.80 Mounted on a Rohm standard board Board size : 70 ㎜×70 ㎜×1.6 ㎜ Copper foil area :7 ㎜×7 ㎜ ①2-layer board (back surface copper foil area :15 ㎜×15 ㎜) ②2-layer board (back surface copper foil area :70 ㎜×70 ㎜) ③4-layer board (back surface copper foil area :70 ㎜×70 ㎜) ①:θja=67.6℃/W ②:θja=35.7℃/W ③:θja=26.0℃/W (Please refer to Fig.9,21 for Ib.) (Please refer to Fig.5,17 for Ishort.)

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP

  • Notes for use 1. Absolute maximum ratings Use of the IC in excess of absolute maximum ratings (suc h as the input voltage or operating temperature range) may result in damage to the IC. Assumptions should not be made regarding the state of the IC (e.g., short mode or open mode) when such damage is suffered. If operational values are expected to exceed the maximum ratings for the device, consider adding protective circuitry (such as fuses) to eliminate the risk of damaging the IC. 2. Electrical characteristics described in these specifications may vary, depending on temperature, supply voltage, external circuits and other conditions. Therefore, be sure to check all relevant factors, including transient characteristics. 3. GND potential The potential of the GND pin must be the minimum potential in the system in all operating conditions. Ensure that no pins are at a voltage below the GND at any time, regardless of transient characteristics. 4. Ground wiring pattern When using both small-signal and large- current GND traces, the two ground trac es should be routed separately but connected to a single ground potential within the applicati on in order to avoid variations in the small-signal ground caused by large currents. Also ensur e that the GND traces of external components do not cause variations on GND voltage. The power supply and ground lines must be as short and thick as possible to reduce line impedance. 5. Inter-pin shorts and mounting errors Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result in damage to the IC. Shorts between output pins or between output pins and the power supply or GND pins (caused by poor soldering or foreign objects) may result in damage to the IC. 6. Operation in strong electromagnetic fields Using this product in strong electromagnetic fields ma y cause IC malfunction. Caution should be exercised in applications where strong electromagnetic fields may be present. 7. Testing on application boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from a jig or fixture during the evaluation process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 8. Thermal consideration Use a thermal design that allows for a sufficient margin in light of the Pd in actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions. (Pd≧Pc) Tjmax : Maximum junction temperature=150℃, Ta : Peripheral temperature[℃] , θja : Thermal resistance of package-ambience[℃/W], Pd : Package Power dissipation [W], Pc : Power dissipation [W], Vcc : Input Voltage, Vo : Output Voltage, Io : Load, Ib : Bias Current Package Power dissipation : Pd (W)=(Tjmax －Ta)/θja Power dissipation : Pc (W)=(Vcc －Vo)×Io+Vcc×Ib 9. Vcc pin Insert a capacitor(Vo≧5V:capacitor≧1µF ~ , Vo＜5V:capacitor≧2.2µF ~)between the Vcc and GND pins. The appropriate capacitance value varies by application. Be sure to allow a sufficient margin for input voltage levels. Electric capacitance Ceramic capacitors,Low ESR capacitors IC

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP 10. Output pin It is necessary to place capacitors between each output pi n and GND to prevent oscillat ion on the output. Usable capacitance values range from 1µF to 1000µF. Ceramic capacitors can be used as long as their ESR value is low enough to prevent oscillation (0.001Ω to 20Ω). Abrupt fluctuations in input vo ltage and load conditions may affect the output voltage. Output capacitance values should be det ermined only through sufficient testing of the actual application. 11. CTL pin Do not make voltage level of chip enable pin keep floating level, or in between VthH and VthL. Otherwise, the output voltage would be unstable or indefinite. 12. For a steep change of the Vcc voltage Because MOS FET for output Transistor is used when an input voltage change is very steep, it may evoke large current. When selecting the value of external circ uit constants, please make sure that the operation on the actual application takes these conditions into account. 13. For an infinitesimal fluct uations of output voltage. At the use of the application that infinitesimal fluctuations of output voltage caused by so me factors (e.g. disturbance noise, input voltage fluctuations, load fluc tuations, etc.), please take enough meas ures to avoid some influence (e.g. insert the filter, etc.). 14. Over current protection circuit (OCP) The IC incorporates an integrated over-cu rrent protection circuit that operates in accordance with the rated output capacity. This circuit serves to protect the IC from damag e when the load becomes shorted. It is also designed to limit output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous or transitive operation of the protection circuits. 15. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit, which is designed to turn the IC off completely in the event of thermal overload. It is not designed to pr otect the IC from damage or guarantee it s operation. ICs should not be used after this function has activated, or in applications where the operation of this circuit is assumed. Vcc=4.3V～25V(BD33C0AWFP)/6V～25V(BD50C0AWFP) Ta=-40℃～+105℃ Cin=2.2μF～100μF Cout=1 μF～100μF 0.001 0.01 0.1 100 0 200 400 600 800 1000 Io(mA) Cout_ESR(Ω） Unstable operating region Stable operating region Cout_ESR vs Io(reference data) Cin vs Cout(reference data) ※Operation Notes 10 Measurement circuit

  • BD33C0AWFP Vcc=4.3V～25V Vo=3.3V Ta=-40℃～+105℃ Io=0A～1A 100 11 0 1 0 0 Cout（μF） Cin（μF） 2.2 Unstable operating region Stable operating region
  • BD50C0AWFP Vcc=6V～25V Vo=5V Ta=-40℃～+105℃ Io=0A～1A 100 11 0 1 0 0 Cout(μF) Cin（μF） Stable operating region Cout(1.0μF～) Vo CTL GND Cin VCTL (5V) BD33C0AWFP (2.2μF～) ESR Io(ROUT) (0.001Ω～) Vcc BD33C0AWFP(4.3V～25V) N.C. BD50C0AWFP(6V～25V) BD50C0AWFP (1.0μF～)

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP 16. Applications or inspection processes where the potential of the Vcc pin or other pins may be reversed from their normal state may cause damage to the IC's internal circuitry or elements. Use an output pin capacitance of 1000µF or lower in case Vcc is shorted with the GND pin while the external capacitor is charged. Insert a diode in series with Vcc to prevent reverse current flow, or insert bypass diodes between Vcc and each pin. 17. Positive voltage surges on VCC pin A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 35V on the VCC pin. 18. Negative voltage surges on VCC pin A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on the VCC pin. 19. Output protection diode Loads with large inductance components may cause reverse current flow during startup or shutdown. In such cases, a protection diode should be inserted on the output to protect the IC. 20. Regarding input pins of the IC This monolithic IC contains P+ isolation and P substrat e layers between adjacent elements in order to keep them isolated. PN junctions are formed at the intersection of th ese P layers with the N layers of other elements, creating parasitic diodes and/or transistors. For example (refer to the figure below): ○When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode ○When GND > Pin B, the PN junction operates as a parasitic transistor Parasitic diodes occur inevitably in the structure of the IC , and the operation of these parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (a nd thus to the P substrate) should be avoided. Example of Simple Monolithic IC Architecture Parasitic elements (Pin A) Parasitic elements or transistors (Pin B) C B E N P N N P+ P+ Parasitic elements or transistors P substrate (Pin B) C B E Transistor (NPN) (Pin A) N P N N P+ P+ Resistor Parasitic elements P GND GND GND N Vcc GND Vcc GND

www.rohm.com 2011.07 - Rev. A © 2011 ROHM Co., Ltd. All rights reserved. BD33C0AWFP, BD50C0AWFP

  • Ordering part number B D X X C 0 A W F P - E 2 Part No. Output voltage 33: 3.3V output 50:5.0V～ Current capacity C0A:Output 1A Shutdown switch W : With switch None : Without switch Package FP : TO252 Packaging specification E2: Embossed tape and reel

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://www.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Produc ts. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. T h e P r o d u c t s a r e n o t d e s i g n e d o r m a n u f a c t u r e d t o b e u s e d w i t h a n y e q u i p m e n t , d e v i c e o r system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.