BD501 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD501/B
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 50V(Min) 8 0 V ( M i n )
- High Power Dissipation
APPLICATIONS
- Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD501 55 VCBO Collector-Base Voltage BD501B 85 V BD501 50 VCEO Collector-Emitter Voltage BD501B 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.39 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD501/B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD501 50 VCEO(SUS) Collector-Emitter Sustaining Voltage BD501B IC= 30mA ;IB= 0 B V BD501 IC= 5A; IB= 0.5A B VCE(sat) Collector-Emitter Saturation Voltage BD501B IC= 3.5A; IB= 0.35A 1.0 V BD501 IC= 5A; VCE= 4V VBE(on) Base-Emitter On Voltage BD501B IC= 3.5A; VCE= 4V 1.6 V VCB= 55V;IE= 0 ICBO Collector Cutoff Current VCB= 85V;IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA BD501 IC= 5A; VCE= 4V hFE DC Current Gain BD501B IC= 3.5A; VCE= 4V 15 90 fT Current-Gain—Bandwidth Product IC= 1.0A ; VCE= 10V 8 MHz isc Website：www.iscsemi.cn 2