BD437 MICRO-ELECTRONICS

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 1

Technical content

ea | El SILICON | bea TRANSISTOR nn =. DESCRIPTION 4.700.185) sous aoe . 20a 036 | L BD437 is silicon epitaxial-base NPN ra) | A455) power transistor, intended for use in tr ‘a ‘sco.269 medium power linear and switching ; | i a r applications. « ah - 4.700.185) iH rr - 22 Loy, ABSOLUTE MAXIMUM RATINGS | Roswop at Collector-Base Voltage VCBO $980.2) 7 45V Collector-Emitter Voltage VCES 45V Collector-Emitter Voltage VCEO 45V Emitter-Base Voltage VEBO 5V Collector Current Ic 4A Collector Peak Current (t<10ms) a ICM TA _ Continuous Power Dissipation . Pd 36W Operating & Storage Junction Temperature Tj,Tstg ~65 to +150°C ELECTRO-OPTICAL CHARACTERISTICS — (Ta=25°C) PARAMETER SYMBOL CONDITIONS Collector Cutoff Current ICBO 100 pA |VCB=45V JE=0 ‘Collector Cutoff Current ICES 100 pA |VCE=45V VBE=0 \\Emitter Cutoff Current IEBO 1 mA |VEB=5V_ IC=0 \\Collector-Emitter Breakdown Voltage | LVCEO* | 45 Vv |IC=10mA_ IB=0 |Collector-Emitter Saturation Voltage | VCE(sat)* 0.6 | Vv c=2a IB=0.2A |Base-Emitter Voltage VBE* 1.2 Vv lIc=2A VCE=1V {D.C. Current Gain HFE* 30 130 IC=10mA VCE=5V | 85 140 IC=500mA VCE=1V

40 IC=2A VCE=1V

|Current Gain Bandwidth Product f1* 3 MHz |IC=250mA VCE=1V * Pulse Test : Pulse Width <300ps, Duty Cycle <2%. MICRO ELECTRONICS LID. #4 8R 24) MM. 38, Hung To Road, Microtron Building, Kwun Tong, Kowloon, Hong Kong. ey ee