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www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. Power Management ICs for Automotive Body Control Regulator with Voltage Detector and Watchdog Timer BD3010AFV-M

  • Description BD3010AFV-M is a regulator IC with integrated WDT (Watch Dog Timer), high output voltage accuracy ±2.0% and 80µA (Typ.) low circuit current consumption. BD3010AFV-M supports usage of low ESR ceramic capacitor for output stability. Also integrated is an automatic WDT ON/OFF feature using output current detection and an output clamping circuit to prevent output overshoot caused by current flow. The reset detection voltage can be adjusted by connecting resistors on the RADJ terminal. BD3010AFV-M can be a stable power supply for any applications while detecting malfunction of microcontrollers.
  • Features 1) Vcc Max Voltage ・・・50V 2) High Output Voltage Accuracy・・・±2.0%(Ta=-40 ~ 125 ℃) 3) Low Circuit Current ・・・80µA (Typ.) 4) Output Circuit ・・・Pch DMOS 5) Supports Low ESR Ceramic Capacitor 6) Integrated Over Current Pr otection and Thermal Shut Down 7) Integrated WDT Reset Circuit (Adjusta ble Detection Voltage through RADJ pin) 8) Integrated Automatic WDT ON/OFF Function through Output Current Detection 9) WDT Can be Switched ON/OFF by Using INH Pin 10) Integrated Output Voltage Clamping Circuit Package ・・・SSOP-B20
  • Applications Any application using a microcontroller or a DSP such as automotive (body control), display, server, DVD, phone, etc No.10039EAT09

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M

  • Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Unit Supply voltage *1 Vcc -0.3 ~ +50 V VADJ set pin voltage VADJ -0.3 ~ +7 V Regulator output pin voltage VOUT -0.3 ~ +7 V INH pin voltage VINH -0.3 ~ +15 V Reset output pin voltage VRo -0.3 ~ +7 V Watchdog input pin voltage VCLK -0.3 ~ +15 V Watchdog time set pin voltage VCT -0.3 ~ +7 V Watchdog operation current set pin voltage VWADJ -0.3 ~ +7 V Power dissipation *2 Pd 1.25 W Operating temperature range Topr -40 ~ +125 ℃ Storage temperature range Tstg -55 ~ +150 ℃ Maximum junction temperature Tjmax 150 ℃ *1 Not to exceed Pd. *2 Reduced by 10.0mW/ ℃ over Ta=25℃, when mounted on 70mm×70mm×1.6mm glass epoxy board:
  • Operating Conditions(Ta=-40 ~ +125℃) Parameter Symbol Min. Max. Unit Supply Voltage *3 Vcc 5.6 36.0 V Supply Voltage *4 Vcc 6.0 36.0 V Output current Io 0 200 mA *3 For the output voltage, consider the voltage drop (dropout voltage) due to the output current. *4 Operating condition for automatic WDT ON/OFF. NOTE: This product is not designed for protection against radioactive rays.

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M

  • Electrical characteristics(Unless otherwise specified, Ta=-40 ~ +125℃, Vcc=13.5V, INH=5V, CLK=GND, Io=0mA) Parameter Symbol Min. Ty p. Max. Unit Conditions [Entire Device] Circuit current 1 Icc1 - 80 140 µA Circuit current 2 Icc2 - 110 170 µA Io=50mA(Ta=25 ℃) [Regulator] Output voltage OUT 4.90 5.00 5.10 V Line regulation Line.Reg - 5 30 mV Vcc=5.6 ~ 36V Load regulation Load.Reg - 20 60 mV Io=5 ~ 150mA Dropout voltage ΔVd - 0.25 0.50 V Vcc=4.75V, Io=150mA Ripple rejection R.R. 45 55 - dB f=120Hz, ein=1Vrms, Io=100mA WADJ mirror current ratio ΔI 0.002 0.010 0.025 - Io=50mA(output) Output voltage clamp (Comparator) Vc lp 5.2 5.5 5.8 V Io=20mA(input) [Reset] Detection voltage Vdet 4.12 4.25 4.38 V RADJ=Open Hysteresis width VHS 35 70 150 mV Output delay time L→H Low output voltage VRST - 0.1 0.4 V OUT=4.0V Min. operating voltage VOPL 1.5 - - V [Watchdog Timer] Upper switching threshold voltage VthH 1.08 1.15 1.25 V WDT ON, INH=Open Lower switching threshold voltage VthL 0.13 0.15 0.17 V WDT ON, INH=Open WDT charge current Ictc 3.5 5.0 6.5 µA WDT ON, INH=Open, CT=0V WDT discharge current Ictd 0.8 1.3 1.7 µA WDT ON, INH=Open, CT=1.3V WDT watch time TWH 6.4 8.0 9.6 ms WDT ON, INH=Open, CT=0.01µF(Ceramic Cap) ※Characteristics of ceramic cap not considered. WDT reset time TWL 1.6 2.0 2.4 ms WDT operating current IOA 0.3 1.7 4.0 mA WDT ON, INH open, 5kΩ resistor is placedbetween WADJ and OUT pins. ※Characteristics of external resistor not considered. [INH] WDT OFF threshold voltage VHINH OUT ×0.8 - OUT V WDT ON threshold voltage VLINH 0 - OUT ×0.3 V Pulled down inside the IC when INH=open INH input current IINH - 15 30 µA INH=5V [CLK] CLK OFF threshold voltage VLCLK 0 - OUT ×0.3 V CLK ON threshold voltage VHCLK OUT ×0.8 - OUT V CLK input pulse width TWCLK 500 - - ns

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M

  • Reference Data (Unless otherwise specified, Ta=25℃, Vcc=13.5V, INH=5V, CLK=GND, Io=0mA) 10 100 1000 10000 100000 1E+06 FREQUENCY : f [Hz] RIPPLE REJECTION: R.R. [dB] 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 OUTPUT CURRENT: Io[mA] DROPOUT VOLTAGE: ΔVd [V] 0 100 200 300 400 500 600 700 OUTPUT CURRENT: Io [mA] OUTPUT VOLTAGE: OUT[V] 120 150 180 0 5 10 15 20 25 30 35 SUPPLY VOLTAGE: Vcc [V] CIRCUIT CURRENT: Icc1 [uA] 0.1 0.2 0.3 0.4 0.5 0 50 100 150 200 OUTPUT CURRENT: Io[mA] CIRCUIT CURRENT: Icc2 [mA] 0 5 10 15 20 25 30 35 SUPPLY VOLTAGE: Vcc [V] OUTPUT VOLTAGE: OUT [V] Ta=25℃ Ta=125℃ Ta=-40℃ Fig.2 Circuit Current 2 Ta=25℃ Fig.3 Input Stability Fig.1 Circuit Current 1 Ta=25℃ Ta=-40℃ Ta=125℃ Fig.5 I/O Voltage Difference (Vcc=4.75V) Ta=125℃ Ta=25℃ Ta=-40℃ Fig.6 Ripple Rejection Ta=25℃ Ta=-40℃ Ta=125℃ Fig.4 Load Stability Ta=125℃ Ta=25℃ Ta=-40℃ 4.90 4.95 5.00 5.05 5.10 -40 0 40 80 120 AMBIENT TEMPERATURE: Ta [℃] OUTPUT VOLTAGE: OUT [V] Fig.8 Thermal Shutdown Circuit Characteristics 100 120 140 160 180 200 AMBIENT TEMPERATURE: Ta [℃] OUTPUT VOLTAGE: OUT [V] 170℃ 150℃ Fig.7 Output Voltage vs. Temperature

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M 4.1 4.2 4.3 4.4 4.5 -40 0 40 80 120 AMBIENT TEMPERATURE: Ta [ ℃] RESET DET VOLTAGE : Vdet [V] VHS Vdet 5.4 5.5 5.6 5.7 5.8 5.9 6.0 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE: Ta [℃] SAT DETECTION: [V] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE: Ta [℃] DET OUTPUT CURRENT : IOA [mA] -5.0 -4.0 -3.0 -2.0 -1.0 0.0 1.0 2.0 CT PIN VOLTAGE: VCT [V] CT PIN CURRENT: Ictc,Ictd [uA] Ta=125℃ Ta=25℃ Ta=-40℃ 012345 OUTPUT VOLTAGE: OUT [V] RESET OUTPUT: Ro [V] Ta=-40℃ Ta=25℃ Ta=125℃ Fig.17 WDT Current Detection vs. Vcc (WADJ-OUT = 5kΩ) Fig.15 SAT detection vs. Temperature -20 -15 -10 61 6 2 6 3 6 Vcc[V] DET OUTPUT CURRENT: IOA [%] Ta=25℃ Fig.12 WDT Time vs. Temperature (CT=0. 01µF) (Vcc=5V) -40 0 40 80 120 AMBIENT TEMPERATURE: Ta [℃] WDT : TWL,H [ms] Reset time Watch time 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VRESET[V] IRESET[mA] 024 VINH[V] IINH[uA] Ta=125℃ Ta=25℃ Ta=-40℃ Ta=-40℃ Ta=25℃ Ta=125℃ Fig. 13 VRESET_IRESET (OUT=1.5V,Ro=0.5V) Fig. 14 VINH_IINH

  • Reference Data (Unless otherwise specified, Ta=25℃, Vcc=13.5V, INH=5V, CLK=GND, Io=0mA) Fig.16 WDT Current Detection vs. Temperature (WADJ-OUT = 5kΩ) Fig.10 CT Pin Charge / Discharge Current (Vcc=5V) Fig.9 Voltage detection (RADJ=Open) Fig.11 Reset Detection Voltage vs. Temperature

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M

  • Measurement Circuit for Electrical Data Measurement Circuit of Fig.1 and Fig.2 Oscilloscope Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro A Io Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro V A Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro V Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro V 100mA V Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro Io V ~ ~ Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro V Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro A Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro 0.01μF Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro Vcc N.C GND GND GND NDGND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro A A Oscilloscope Oscilloscope Measurement Circuit of Fig.4 Measurement Circuit of Fig.3 and Fig.7 and Fig.8 Measurement Circuit of Fig.5 Measurement Circuit of Fig.6 Measurement Circuit of Fig.9 and Fig.11 Measurement Circuit of Fig.10 Measurement Circ uit of Fig.12 Measurement Circuit of Fig.13 Measurement Circuit of Fig.14 Measurement Circuit of Fig.15 Measurement Circuit of Fig.16 and Fig.17

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M (Unit : mm) SSOP-B20 0.1 0.1± 0.1 6.4 ± 0.3 4.4 ± 0.2 6.5 ± 0.2 0.15 ± 0.1 0.22 ± 0.1 0.65 1.15 ± 0.1 0.3Min.

  • Block Diagram Fig.18 Pin No. Pin Name Function Pin No. Pin Name Function

1 Vcc Power supply Pin 11 Ro Reset output pin

2 N.C. - 12 RADJ Reset detection voltage set pin

3 GND

13 WADJ WDT operating current set pin

4 GND 14 GND

5 GND 15 GND

6 GND 16 GND

7 GND 17 GND

8 CLK Clock input from microcontroller 18 GND

9 INH WDT ON/OFF function pin 19 OUT

External capacitance for reset output delay time, WDT monitor time setting connection pin

20 OUT

  • Top View (Package dimension) Ro RADJ WADJ GND GND GND GND OUT OUT OCP GND Edge Forced Monitor Stand-by ON/OFF Circuit VthH PREREG VREF TSD VthL WDT VREF_R VCLP Vcc OUT VREF_R Vcc N.C. GND GND GND CLK INH CT GND GND SSOP-B20

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M

  • I/O Equivalent Circuits (Resistance value is Typ. value) <Regulator> Vcc OUT CLK WADJ <Reset> Ro INH RADJ CT Vcc IC OUT 3750 kΩ Vcc 1250 kΩ 673 kΩ 200 kΩ CLK OUT 10kΩ External R for detection WADJ 140kΩ 330kΩ OUT Ro OUT 470kΩ 1kΩ INH 300kΩ OUT 10kΩ OUT RADJ 815 kΩ 330 kΩ OUT 100Ω 1kΩ VREF OUT OUT OUT OUT 1kΩ 10pF 1kΩ CT

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M RADJ OUT R2=815kΩ R1=330kΩ OUT RADJ≒1.23V Ro 470kΩ OUT 100Ω 1kΩ

  • Detection Voltage Adjustment (Resistance Value is TYP. value) IC Internal Block Diagram When typical detection voltage is 4.25V Vdet ≒ RADJ × (R1+R2) / R1 ・Vdet : Reset detection voltage ・RADJ : Internal reference voltage (MOS input) ・R1,R2 : IC internal resistor (Voltage detection precision is tightened up to ±3% by laser-trimming the R1 and R2) RADJ will fluctuate 1.23V±6.0% Insert pull down resistor R3 (lower resistance than R1) in between RADJ-GND, and pull down resistor R4 (lower resistance than R2) in between RADJ-OUT to adjust the detection voltage. By doing so, the detection voltage can be adjusted by the calculation below. Vdet=RADJ×[{R2×R4/(R2+R4)}+{R1×R3/(R1+R3)}]/{R1×R3/(R1+R3)} When the output resistance value is as small enough to ignore the IC internal resistance, you can find the detection voltage by the calculation below. Vdet ≒ RADJ × (R3+R4) / R3 Adjust the resistance value by application as the circuit current will increase due to the added resistor.

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M

  • WDT Voltage Detection (Resistance Value is TYP. value) WDT can be automatically switched ON/OFF by the output load current. To detect the output load current, add a resistor between OUT-WADJ. Current detection is adjustable by selecting 1 kΩ ~ 15k Ω resistance. Calculation: Io(Desired load current value) x ΔI(WADJ current mirror ratio)x(external R/140kΩ※1) ≧100mV※2 ※1 is IC internal resistance between WADJ-OUT (tolerance approx ±30%, temperature coefficient approx 2000ppm) ※2 is an offset of detection comparator (tolerance approx 100mV±10%) When there is no resistance between WADJ-OUT, Io=70µA can be detected by the calculation below Io(Desired load current value) x ΔI (WADJ current mirror ratio) x 140kΩ≧100mV ※If the OUT-WADJ resistance value is not same as the condition on the electrical characteristics table, i.e., 5K Ω, choose the resistance value in ratio referring to the above equation. <Timing Chart> Timing Chart from the no load condition (Stand-by Mode) CT pull up voltage Vth H Vth L 13.5V OUT 1.25V 1.15V 0.15V 5mA 0mA Stand-by mode OUT Vcc Ro Io CT CLK INH IoA LOW HIGH WDT ON WDT OFF 140kΩ PowTr OUT WADJ WADJ-R (External R) IC Internal Block Diagram

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M 13.5V 1.25V 4.0V 4.0V 4.32V 4.25V VHS 70mV CT pull up voltage OUT Voltage 0mA Reset on OUT Vcc Ro Io INH CT CLK 4.0V Power on reset Reset on Reset on Power on reset

  • Power ON Reset Power ON reset (output delay time) is adjustable by CT pin capacitor. TdLH(S) ≒(1.15V×CT capacitance(µF) / Ictc(µA)(TYP.) ・TdLH : Output delay time( power ON reset) ・1.15V : Upper switching threshold voltage(TYP.) ・CT capacitance : Capacitor connected to CT pin ・Ictc : WDT charge current <Calculation example>with 0.01µF CT pin capacitor TdLH(S) = 1.15V×0.01µF / 5.0µA ≒ 2.3msec ※If the CT capacitance is not the same as the condition on th e electrical characteristics table, i.e., 0.01µF, choose the capacitance value in ratio referring to the above equation. <Timing Chart> ※Watchdog Timer OFF(INH ON)

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M Watch time Reset time CLK<500nsec 5mA 13.5V IoA Out Voltage Watch dog on WDT OFF(INH=ON) 1.25V 1.15V 0.15V Stand-by mode 0mA OUT Vcc Ro Io INH CT CLK

  • Watchdog Timer Watch Dog Timer ( WDT watch time, reset time) is adjustable by the CT pin capacitor TWH(S) ≒(1.00V×CT capacitance (µF))/Ictd(µA) (Typ.) TWL(S) ≒(1.00V×CT capacitance (µF))/Ictc(µA) (Typ.) ・TWH : WDT watch time (delay time to turn the reset ON) ・TWL : WDT reset time (time the reset is ON) ・1.00V : Upper switching threshold voltage - lower switching threshold voltage ・CT capacitance : CT pin capacitor ※ Shared with power ON reset ・Ictc : WDT charge current ・Ictd : WDT discharge current ※WDT time’s accuracy is ±20% by trimming <Calculation example>with 0.01µF CT pin capacitor ※If the CT capacitance is not the same as the condition on t he electrical characteristics table, choose the capacitance value in ratio referring to the above equation. <Timing Chart>

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M LOW WDT ON WDT OFF HIGH INH ON/OFF Current CT 300kΩ VREF_R(TYP≒1.25V) External Capacitor 10kΩ

  • WDT timer ON/OFF switch INH (Resistance value is Typ. value) BD3010AFV-M has a switch INH to turn the WDT ON/OFF IC Internal Block Diagram By using INH ON, CT potential can be pulled up to internal voltage VREF_R (invalid with power ON reset) <Timing Chart> CT pull up voltage Vth H Vth L 13.5V 1.25V 1.15V 0.15V 5mA 0mA OUT Vcc Ro Io INH CT CLK Out Voltage IoA

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M INH CT Forced watch mode Forced watch mode 4.32V 4.25V VHS 70mV 1.15V 0.15V Stand-by mode 1.25V OUT Vcc Ro Io INH CT CLK VHS 70mV 1.15V 0.15V 1.25V OUT Vcc Ro Io CLK 5.7V 4.32V 4.25V Stand-by mode Watch time Power on reset Power on reset OUT Voltage Reset time Reset “L” Reset “L” Reset “L” Reset “L” Forced watch mode Forced watch mode Reset time 5.7V watch time

  • Forced Watch Mode By detecting an input voltage (battery voltage) called output SAT detection, WDT can be forced to be operated. WDT will be forced ON from reset cancellation voltage to Vcc≒5.7V (WDT can be turned OFF by INH) IC Internal Block Diagram <Timing Chart including Forced Watch Mode> ※No CLK signal Input Stand-by mode LOW&RESET cancel WDT forced ON HIGH&RESET cancel VREF Vcc 64kΩ 8750kΩ 2500kΩ

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M 5.7V Reset “L” Forced watch mode 4.25V VHS 70mV Reset “L” Stand-by mode Reset “L” 4.32V 4.25V VHS 70mV Reset “L” Forced watch mode 5.7V Stand-by mode 1.15V 0.15V OUT 1.25V OUT Vcc Ro Io INH CT CLK 4.32V 1.15V 0.15V OUT Voltage 1.25V OUT Vcc Ro Io INH CLK CT Power on reset Power on reset Forced watch Forced watch mode <Timing Chart including Forced Watch Mode> ※With CLK signal Input

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M <Entire Timing Chart> Forced watch mode 4.0V Watch time 4.32V 4.25V VHS 70mV Forced watch mode WDT OFF(INH=ON) 1.25V 1.15V 0.15V 4.0V 0mA Watch dog ON 5mA OUT Voltage Minimum reset Movement voltage Stand-by mode Forced watch mode 13.5V 5.5V OUT Vcc Ro Io INH CLK CT Reset on Power on reset Power on reset Reset on Reset on IoA Reset time

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M ※Reduced by 10.0mW/℃ over Ta=25℃, when mounted on 70mm×70mm×1.6mm glass epoxy board Fig.19 Fig.20 (Reference Data) Fig.21 (Reference Data)

  • Thermal Dissipation Curve Refer to Fig.19 ~ 21 thermal dissipation characteristics for usage above Ta=25 ℃. The IC’s characteristics are affected heavily by the temperature, and if is exceeds its max junction temperature (Tjmax), the chip may degrade or destruct. Thermal design is critical in terms of avoiding Instantaneous destruction and reliability in long term usage. The IC needs to be operated below its max junction temperature (Tjmax) to av oid thermal destruction. Refer to Fig. 19 ~ 21 for SSOP-B20 package thermal dissipation characteristics. Operate the IC within power dissipation (Pd) when using this IC. Power consumption Pc(W) calculation will be as below (for Fig.21④) If load current Io is calculated to operate within power dissip ation, it will be as below, where you can find the max load current Io Max for the applied voltage Vcc of the thermal design. Io ≦ Pd-Vcc×Icc2 Vcc-OUT (Refer to Fig2 for Icc2) Example) at Ta=85℃, Vcc=12V, OUT=5V Io ≦ 1.578-12×Icc2 12-5 Io ≦ 200mA (Icc2=110µA) Refer to above and adjust the thermal design so it will be wi thin power dissipation within the entire operation temperature range. Below is the power consumption Pc calculation when (OUT-GND short) Pc=Vcc×(Icc2+Ishort) (Refer to Fig.4 for I short) 0.0 1.0 2.0 3.0 0 25 50 75 100 125 150 Ambient Temperature: Ta [℃] Power Dissipation : Pd [W] ①1.25W 0.0 1.0 2.0 3.0 0 25 50 75 100 125 150 Ambient Temperature: Ta [℃] Power Dissipation : Pd [W] ①1.25W ②1.60W ③2.10W ④2.60W 0.0 1.0 2.0 3.0 0 25 50 75 100 125 150 Ambient Temperature: Ta [℃] Power Dissipation : Pd [W] ①1.40W ②1.66W ③2.13W ④3.03W Fig.21④:θja=41.3℃/W→-24.2mW/℃ Pc=(Vcc-OUT)×Io+Vcc×Icc2 Power dissipation Pd≧Pc (Ishort: short current) Vcc OUT Io Icc2 : Input Voltage : Output Voltage : Load Current : Circuit Current ROHM standard board Board size:70mm ×70mm×1.6mm θja=100(℃/W) ROHM standard board Board size:70mm ×70mm×1.6mm ①1-layer board ②2-layer board(back surface copper foil area:15mm×15mm ③2-layer board(back surface copper foil area:70mm×70mm ④4-layer board(back surface copper foil area:70mm×70mm ①θja=100.0℃/W ②θja=78.1℃/W ③θja=59.5℃/W ④θja=48.1℃/W ROHM standard board ROHM standard board Board size:70mm ×70mm×1.6mm PKG GND short to board thermal via ①1-layer board ②2-layer board(back surface copper foil area:15mm×15mm ③2-layer board(back surface copper foil area:70mm×70mm ④4-layer board(back surface copper foil area:70mm×70mm ① θja=89.4℃/W ② θja=75.4℃/W ③ θja=58.6℃/W ④ θja=41.3℃/W

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M

  • Pin Settings / Precautions 1. Vcc pin Insert a 0.33 ~ 1000µF capacitor between the Vcc and GND pins. The appropriate capacitance value varies by application. Be sure to allow a sufficient margin for input voltage levels. 2. Output pins It is necessary to place capacitors between each output pin and GND to prevent oscillation on the output. Usable capacitance values range from 0.1µF ~ 1000µF. Abrupt fluctuations in input voltage and load conditions may affect the output voltage. Output capacitance values should be determined only through sufficient testing of the actual application. 3. CT pin Connecting a capacitance of 0.01µF ~ 1µF on the CT pin is recommended. Cout_ESR vs Io(reference data) 0.001 0.01 0.1 100 0 50 100 150 200 出力負荷Io(mA) 出力コンデンサESR(Ω) Vcc=5.6V~36V Ta=-40℃~+125℃ Cin=0.33µF~100µF Cout=0.1µF ~100µF Stable operating region Io(mA) Cout_ESR(Ω) ※ Pin Settings / Precautions 2 Measurement circuit Cout (0.1µF~100µF) Io(ROUT) Cin (0.33µF ~100µF) ESR (0.001Ω~)Vcc (5.6V~36V) Vcc N.C GND GND GND GND GND CLK INH CT OUT OUT GND GND GND GND GND WADJ RADJ Ro

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  • Notes for use 1. Absolute maximum ratings Use of the IC in excess of absolute maximum ratings (suc h as the input voltage or operating temperature range) may result in damage to the IC. Assumptions should not be made regarding the state of the IC (e.g., short mode or open mode) when such damage is suffered. If operational values are expected to exceed the maximum ratings for the device, consider adding protective circuitry (such as fuses) to eliminate the risk of damaging the IC. 2. Electrical characteristics described in these specifications may vary, depending on temperature, supply voltage, external circuits and other conditions. Therefore, be sure to check all relevant factors, including transient characteristics. 3. GND potential The potential of the GND pin must be the minimum potential in the system in all operating conditions. Ensure that no pins are at a voltage below the GND at any time, regardless of transient characteristics. 4. Ground wiring pattern When using both small-signal and large- current GND traces, the two ground trac es should be routed separately but connected to a single ground potential within the applicati on in order to avoid variations in the small-signal ground caused by large currents. Also ensure that the GND trac es of external components do not cause variations on GND voltage. The power supply and ground lines must be as short and thick as possible to reduce line impedance. 5. Inter-pin shorts and mounting errors Use caution when orienting and positioning the IC for mounti ng on printed circuit boards. Improper mounting may result in damage to the IC. Shorts between output pins or between output pins and the power supply or GND pins (caused by poor soldering or foreign objects) may result in damage to the IC. 6. Operation in strong electromagnetic fields Using this product in strong electromagnetic fields ma y cause IC malfunction. Caution should be exercised in applications where strong electromagnetic fields may be present. 7. Testing on application boards When testing the IC on an application board, connecting a ca pacitor directly to a low-impedance pin may subject the IC to stress. Always discharge capacitors co mpletely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from a jig or fixture during the ev aluation process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 8. Thermal consideration Use a thermal design that allows for a sufficient margin in light of the Pd in actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions. (Pd≧Pc) Tjmax : Maximum junction temperature=150℃, Ta : Peripheral temperature[℃] , θja : Thermal resistance of package-ambience[℃/W], Pd : Package Power dissipation [W], Pc : Power dissipation [W], Vcc : Input Voltage, OUT : Output Voltage, Io : Load, Icc2 : Bias Current 2 Package Power dissipation : Pd (W)=(Tjmax -Ta)/θja Power dissipation : Pc (W)=(Vcc -OUT)×Io+Vcc×Icc2 9. Output voltage clamp To prevent rises in the output voltage in response to current surges through the load, the IC incorporates an output voltage clamp circuit. This circuit helps prevent damage to the micr ocontroller due to output voltage overshoot. However, this circuit is only effective for circuit paths with instantaneous peak currents and therefore does not support DC operation. 10. For an infinitesimal fluct uations of output voltage. At the use of the application t hat infinitesimal fluctuations of output voltage caused by so me factors (e.g. disturbance noise, input voltage fluctu ations, load fluctuations, etc.), please ta ke enough measures to avoid some influence (e.g. insert the filter, etc.). 11. Over current protection circuit (OCP) The IC incorporates an integrated over-c urrent protection circuit that operates in accordance with the rated output capacity. This circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in ap plications characterized by the cont inuous or transitive operation of the protection circuits. 12. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit, which is designed to turn the IC off completely in the event of thermal overload. It is not designed to protect the IC from damage or guarantee its operation. ICs should not be used after this function has activated, or in applications where the operation of this circuit is assumed.

www.rohm.com 2010.11- Rev.A © 2010 ROHM Co., Ltd. All rights reserved. BD3010AFV-M 13. Applications or inspection processes wh ere the potential of the Vcc pin or other pins may be reversed from their normal state may cause damage to the IC's internal circuitry or el ements. Use an output pin capacitance of 1000µF or lower in case Vcc is shorted with the GND pin while the external capacitor is charged. Insert a diode in series with Vcc to prevent reverse current flow, or insert bypass diodes between Vcc and each pin. 14. Positive voltage surges on VCC pin A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 50V on the VCC pin. 15. Negative voltage surges on VCC pin A schottky barrier diode should be inserted between VCC a nd GND for protection against voltages lower than GND on the VCC pin. 16. Output protection diode Loads with large inductance components may cause reverse current flow during startup or shutdown. In such cases, a protection diode should be inserted on the output to protect the IC. 17. Regarding input pins of the IC This monolithic IC contains P+ isolat ion and P substrate layers between adjacent elements in order to keep them isolated. PN junctions are formed at the intersection of t hese P layers with the N layers of other elements, creating parasitic diodes and/or transistors. For example (refer to the figure below): ○When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode ○When GND > Pin B, the PN junction operates as a parasitic transistor Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Example of Simple Monolithic IC Architecture Vcc OUT GND Back current prevention diode Bypass diode Output Capacitor Parasitic elements Parasitic elements (Pin A) N P N N P+ P+ Resistor P GND (Pin A) (Pin B) C B E GND N P N N P+ P+ Parasitic elements or transistors P substrate (Pin B) C B E Transistor (NPN) GND N Vcc GND Vcc GND

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  • Ordering part number B D 3 0 1 0 A F V - M E 2 Part No. Part No. Package FV: SSOP-B20 Packaging and forming specification E2: Embossed tape and reel (Unit : mm) SSOP-B20 0.1 0.1± 0.1 6.4 ± 0.3 4.4 ± 0.2 6.5 ± 0.2 0.15 ± 0.1 0.22 ± 0.1 0.65 1.15 ± 0.1 0.3Min. ∗ Order quantity needs to be multiple of the minimum quantity. <Tape and Reel information> Embossed carrier tapeTape Quantity Direction of feed The direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 2500pcs Direction of feed Reel 1pin

R1010Awww.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://www.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redunda ncy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospac e machinery, nuclear-reactor controller, fuel- controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.