BD245 POINN

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BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS PRODUCT INFORMATION JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

  • Designed for Complementary Use with the BD246 Series
  • 80 W at 25°C Case Temperature
  • 10 A Continuous Collector Current
  • 15 A Peak Collector Current
  • Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAA B C E absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω, VBE(off) = 0, R S = 0.1 Ω, VC C = 20 V. RATIN G SYMBO L VALU E UNIT Collector-emitter voltage (R BE = 100 Ω ) BD245 BD245A BD245B BD245 C V CE R 115 V Collector-emitter voltage (I C = 30 mA) BD245 BD245A BD245B BD245 C V CE O 100 V Emitter-base voltage V EB O 5 V Continuous collector current IC 10 A Peak collector current (see Note 1) IC M 15 A Continuous base current IB 3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 80 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3 W Unclamped inductive load energy (see Note 4) ½L IC 2 62.5 m J Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds TL 250 °C

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 199 7 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETE R TEST CONDITION S MIN TY P MA X UNIT V (BR)CE O Collector-emitter breakdown voltage IC = 30 mA (see Note 5) IB = 0 BD245 BD245A BD245B BD245 C 100 V I CE S Collector-emitter cut-off current V C E = 55 V V C E = 70 V V C E = 90 V V C E = 115 V V BE = 0 V BE = 0 V BE = 0 V BE = 0 BD245 BD245A BD245B BD245 C 0.4 0.4 0.4 0.4 m A I CE O Collector cut-off current V C E = 30 V V C E = 60 V IB = 0 IB = 0 BD245/245A BD245B/245 C 0.7 0.7 m A IEB O Emitter cut-off current V EB = 5 V IC = 0 1 m A hFE Forward current transfer ratio V C E = 4 V V C E = 4 V V C E = 4 V IC = 1 A IC = 3 A IC = 10 A (see Notes 5 and 6) VCE(sat) Collector-emitter saturation voltage IB = 0.3 A IB = 2.5 A IC = 3 A IC = 10 A (see Notes 5 and 6) 1 4 V VBE Base-emitter voltage V C E = 4 V V C E = 4 V IC = 3 A IC = 10 A (see Notes 5 and 6) 1.6 3 V hfe Small signal forward current transfer ratio V C E = 10 V IC = 0.5 A f = 1 kHz 20 |hfe| Small signal forward current transfer ratio V C E = 10 V IC = 0.5 A f = 1 MHz 3 thermal characteristics PARAMETE R MIN TY P MA X UNIT R θJC Junction to case thermal resistance 1.56 °C/W R θJA Junction to free air thermal resistance 42 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETE R TEST CONDITIONS † MIN TY P MA X UNIT ton Turn-on time IC = 1 A V BE(off) = -3.7 V IB(on) = 0.1 A R L = 20 Ω IB(off) = -0.1 A tp = 20 µs, dc ≤ 2% 0.3 µs toff Turn-off time 1 µs

Figure 1. Figure 2.

1000 TCS633AG

10 TCS633AB

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 199 7 PRODUCT INFORMATION MAXIMUM SAFE OPERATING REGION S Figure 4. THERMAL INFORMATIO N Figure 5. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 1000 IC - Collector Current - A 0·01 0·1 1·0

100 SAS633AC

t p = 300 µs, d = 0.1 = 10% t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% DC Operation MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE T C - Case Temperature - °C 0 25 50 75 100 125 150 P tot - Maximum Power Dissipation - W 100 TIS633AA

JUNE 1973 - REVISED MARCH 1997 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS PRODUCT INFORMATION SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DAT A SOT-93 ALL LINEAR DIMENSIONS IN MILLIMETERS 4,90 4,70 1,37 1,17 0,78 0,50 2,50 TYP. 15,2 14,7 12,2 MAX. 16,2 MAX. 18,0 TYP. 31,0 TYP. 1,30 1,10 11,1 10,8 4,1 4,0 3,95 4,15 1 2 3 NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW ø

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 199 7 PRODUCT INFORMATION IMPORTANT NOTIC E Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS . Copyright © 1997, Power Innovations Limited