BD202F ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc Silicon PNP Power Transistor BD202F/204F
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO = -45V(Min)- BD202F -60V(Min)- BD204F
- Complement to Type BD201F/203F
APPLICATIONS
- Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4 Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD202F -60 VCBO Collector-Base Voltage BD204F -60 V BD202F -45 VCEO Collector-Emitter Voltage BD204F -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current -3 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 6.3 ℃/W
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn 2 isc Silicon PNP Power Transistor BD202F/204F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BD202F -45 V(BR)CEO Collector-Emitter Breakdown Voltage BD204F IC= -0.2A ;IB= 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 -5 V VCE(sat)-1 Collector-Emitter Saturation Voltage I C= -3A; IB= -0.3A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage I C= -6A; IB= -0.6A -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -2V -1.5 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 -0.2 mA ICBO Collector Cutoff Current VCB= VCBO;IE= 0 VCB= 1/2VCBO;IE= 0; TJ= 150℃ -0.1 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -0.5 mA BD202F IC= -3A ; VCE= -2V hFE-1 DC Current Gain BD204F IC= -2A ; VCE= -2V hFE-2 DC Current Gain IC= 11A ; VCE= -2V 30 fT Current-Gain—Bandwidth Product IC= -0.3A ; VCE= -3V, ftest= 1.0MHz 7.0 MHz Switching Times ton Turn-On Time 1 μs toff Turn-Off Time IC= -2A; IB1= -IB2= -0.2A 2 μs