BD204 ISC
Document overview
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Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD204 DESCRIPTION ·
- With TO-220C package
- Low saturation voltage
- Complement to type BD203
- Wide area of safe operation
APPLICATIONS
- For medium power switching and amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter -base voltage Open collector -5 V IC Collector current (DC) -8 A ICM Collector current-Peak -12 A IBM Base current-Peak -3 A PT Total power dissipation TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 2.08 ℃/W
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD204 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-0.2A ;IB=0 -60 V V(BR)CBO Collector-base breakdown voltage I C=-1mA ; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ; IC=0 -5 V VCEsat-1 Collector-emitter saturation voltage I C=-3A; IB=-0.3A -1.0 V VCEsat-2 Collector-emitter saturation voltage I C=-6A; IB=-0.6A -1.5 V VBEsat Base-emitter saturation voltage I C=-6A; IB=-0.6A -2.0 V ICEO Collector cut-off current V CE=-30V ;IB=0; -0.2 mA ICBO Collector cut-off current VCB=-40V ;IE=0;Tj=150℃ -1.0 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.5 mA hFE DC current gain I C=-2A ; VCE=-2V 30 fT Transition frequency I C=-0.3A ; VCE=-3V 7.0 MHz VBE Base-emitter on voltage I C=-3A;VCE=-2V -1.5 V
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD204 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)