BD201 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD201/203
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO = 45V(Min)- BD201 60V(Min)- BD203
- Complement to Type BD202/204
APPLICATIONS
- Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4 Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD201 60 VCBO Collector-Base Voltage BD203 60 V BD201 45 VCEO Collector-Emitter Voltage BD203 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak t p≤10ms 12 A ICSM Collector Current-Peak t p≤2ms 25 A IB B Base Current 3 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD201/203
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BD201 45 V(BR)CEO Collector-Emitter Breakdown Voltage BD203 IC= 0.2A ;IB= 0 B V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V 1.5 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 B 0.2 mA ICBO Collector Cutoff Current VCB= 40V;IE= 0; TJ= 150℃ 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 0.5 mA BD201 IC= 3A ; VCE= 2V hFE DC Current Gain BD203 IC= 2A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.3A ; VCE= 3V, ftest= 1.0MHz 7.0 MHz Switching Times ton Turn-On Time 1 μs toff Turn-Off Time IC= 2A; IB1= -IB2= 0.2A 4 μs isc Website：www.iscsemi.cn 2