BD202 ISC
Document overview
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor BD202/204
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=-45V(Min)-BD202 -60V(Min)-BD204
- ComplementtoType BD201/203
APPLICATIONS
- Designedforusein hi-fiequipmentdelivering an output of15 to15W into a4Ωor8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage BD202 -60 V BD204 -60 VCEO Collector-EmitterVoltage BD202 -45 V BD204 -60 VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -8 A ICM CollectorCurrent-Peak tp≤10ms -12 A ICSM CollectorCurrent-Peak tp≤2ms -25 A IB BaseCurrent -3 A PC CollectorPowerDissipation @TC=25℃ 60 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 2.08 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 70 ℃/W
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor BD202/204 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter BreakdownVoltage BD202 IC=-50mA;IB=0 -45 V BD204 -60 V(BR)CBO Collector-BaseBreakdown Voltage IC=-1mA;IE=0 -60 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=-1mA;IC=0 -5 V VCE(sat)-1 Collector-EmitterSaturationVoltage IC=-3A;IB=-0.3A -1.0 V VCE(sat)-2 Collector-EmitterSaturationVoltage IC=-6A;IB=-0.6A -1.5 V VBE(sat) Base-EmitterSaturationVoltage IC=-6A;IB=-0.6A -2.0 V VBE(on) Base-EmitterOnVoltage IC=-3A;VCE=-2V -1.5 V ICEO CollectorCutoffCurrent VCE=-30V;IB=0 -0.2 mA ICBO CollectorCutoffCurrent VCB=-40V;IE=0;TJ=150℃ -1.0 mA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -0.5 mA hFE DCCurrentGain BD202 IC=-3A;VCE=-2V BD204 IC=-2A;VCE=-2V fT Current-Gain—BandwidthProduct IC=-0.3A;VCE=-3V,ftest=1.0MHz 7.0 MHz SwitchingTimes ton Turn-OnTime IC=-2A;IB1=-IB2=-0.2A 1 μs toff Turn-OffTime 2 μs