BD034 JIANGSU
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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD034 TRANSISTOR (PNP)
FEATURES
PCM: 1.25 W (Tamb=25℃) Collector current ICM: -2.5 A Collector-base voltage V(BR)CBO: -110 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -110 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 V Collector cut-off current ICBO VCB=-100V, IE=0 µA Emitter cut-off current IEBO VEB=-5V, IC=0 µA hFE(1) VCE=-2V, IC=-100mA 100 560 DC current gain hFE(2) VCE=-2V, IC=-1.5A Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-200mA -0.5 V Base-emitter voltage VBE VCE=-5V, IC=-500mA V Transition frequency fT VCE=-1V, IC=-250mA, f=1MHz MHz CLASSIFICATION OF hFE(1) Rank R S T U Range 100-200 140-280 200-400 280-560 1 2 3 TO-126 1. EMITTER 2. COLLECTOR 3. BASE
TypicalCharacteristics BD034