BCX70K SAMSUNG

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_SAMSUNG SEMICONDUCTOR INC 14E O ff 7964342 ooO7223 0 I BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR . SOT-23 ABSOLUTE MAXIMUM RATINGS (T.=25°C) Collector-Base Voltage Veeo 45 v aS Collector-Emitter Voltage Veeo 45 v Lf Th Les Emitter-Base Voltage Vewo 6 Vv ' 1 fA ay ‘. Collector Current iS 200 mA Collector Dissipation Po 350 mw Storage Temperature Tstg 150 °c . * Refer to MMBT3904 for graphs: . 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T,=25°C) - [_“eeeseine [oan | tewcnten [oie [ome [om | i Collector-Emitter Breakdown Voltage. | BVceo kc=2.0mA, k=O 45 v Emitter-Base Breakdown Voltage BVeso. le=1.0pA, k=O 5 v Collector Cutoff Current lees Vee=32V, Vee=O 20 nA Emitter Cutoff Current teno Ves=4V. k=0 20 nA DC Current Gain Dee Vee=5V, le=10pA 100 Vee= SV, Ic=2.0mA 380 630 * Vce=1V, le=50mA. 100 Collector-Emitter Saturation Voltage Vee (Sat) | Ic=10mA, Ig=0.25mA 0.35 v c= 50mA, Ip=1.25mA 0.65 Vv Base-Emitter Saturation Voltage Vee (sat) | Ic=50mA, la=0.25mA 0.6 0.85 v Io=50mA, le=1.25mA 07 1.05 Vv Base-Emitter On Voltage Vee (on) | b=2.0mA, Voe=5V 0.55 0.75 v Current Gain-Bandwidth Product tr c= 10MA, Vce=5V 125 MHz f=100MHz Output Capacitance Cob Vea=10V, le=O 45 pF f=1MHz Noise Figure NF Voe=5V, lo=0.2mA 6 dB Rs=2KQ, f=1KHz Turn On Time ton k= 10mA, Jay =1.0mA 150 ns Turn Off Time totf Ves=3.6V, la2=1.0mA 800 ns R,=R,=5RN, R_=9900 Marking . . — : = | =| | & SAMSUNG SEMICONDUCTOR 493