BCX70J SAMSUNG

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"SAMSUNG SEMICONDUCTOR INC: 14E D | 29b4L42 OOO?222-9 | i BCX70J NPN EPITAXIAL SILICON TRANSISTOR | . (T-2F 14 i GENERAL PURPOSE TRANSISTOR 5 t SOT-23 : : i ABSOLUTE MAXIMUM RATINGS (T, =25°C) i Collector-Base Voltage Veoo 45 v Kj Cee Collector-Emitter Voltage Veco 46 v CPR eG Emitter-Base Voltage + | Vex 6 v , 1 fe Collector Current le 200 mA . Collector Dissipation Pe 350 mw : ‘Storage Temperature Tstg 150 °C | * Refer to MMBT3904 for graphs | 1. Base 2, Emitter 3. Collector - ELECTRICAL CHARACTERISTICS (T.=25°C) oa i $ Collector-Emitter Breakdown Voltage | BVceo | le=2.0mA, le=0 45 v Emitter-Base Breakdown Voltage BVr99 | fe=1.0yA, =O 5 v Collector Cutoff Current lees, | Vee=32V. Vee=0 20 nA Emitter Cutoff Current leo | Vea=4V, Ie=0 20 nA DC Current Gain hee | Vce=5V, lo= 104A 40 4 Ver=5V. le=2.0mA 250 460 : Vce=1V, lc=5OmA 90 Collector-Emitter Saturation Voltage | Vce (sat) : lo=10mA, ly=0.25mA 0.35 v | =50mA, p= 1.25mA 0.55 v Base-Emitter Saturation Voltage Vee (sat) | Ic =50MA, lg=0.25mA 0.6 0.85 Vv j le=50mA, Ig= 1.25mA 0.7" 1.05 v Base-Emitter On Voltage Vee (on) | Ic=2.0mA, Vce=5V 0.55 0.75 v Current Gain-Bandwidth Product fr L=10mA, Vce=5V 126 Miz {=100MHz | ‘Output Capacitance Cob | Vea=10V, le=O | 45 pF | f=1MHz | . Noise Figure NF i Vce=5V, Ic=0.2mA 6 B . j Re=2KQ, f=1KHz | Tum On Time fon Ig=10mA, bay =1.0mA 150 ns : Turn Off Time tot | Veg=3.6V, lea™ 1.0mA 800 ns | R=R,=5KN, R=990R i Marking A J I . co oI | rH SAMSUNG SEMICONDUCTOR 492