BCX70H SAMSUNG

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SAMSUNG SEMICONDUCTOR: INC LYE D Pesesase 0007221? I . BCX70H NPN EPITAXIAL SILICON TRANSISTOR aa— 17 GENERAL PURPOSE TRANSISTOR . —— 7 sor-23 ABSOLUTE MAXIMUM RATINGS (T.=25°C) Colector-Base Voltage Veo 45 v Poa ree Collector-Emitter Voltage Veeo 45 v Lf gs Emitter-Base Voltage =~ Veo 5 v D ff, Collector Current ke 200 mA . Collector Dissipation Po 350 mw Storage Temperature Tstg 160 *c '* Refer to MMBT3904 for graphs 1. Bese 2. Enter 2. Cofactor ELECTRICAL CHARACTERISTICS (T. =25°C) Collector-Emitter Breakdown Voltage | BVceo Ic=2.0MA, le=O0 45 v Emitter-Base Breakdown Voltage BVeso le=1.0pA, bc=0 5 v Collector Cutott Current lees Vee=92V. Voe=0 20 nA Emitter Cutoff Current leo Ves=4V, lo=0 20 nA DC Current Gain hee Vee=6V, lo= 10uA 20 Ver=5V, e=2.0mA 180 310 Vee@1V, b= SOmA 70 Collector-Emitter Saturation Voltage Vee (sat) | L=10mA, le=0.25mA 0.36 v . 1 =SOMA. In=1.25mA 0.55 Vv Base-Emitter Saturation Voltage Vee (sat) [em 6OmA, le=0.25mA 06 0.85 v [c= 50mA, lo=1-25MA 07 1.05 v Base-Emitter On Voltage Vee (on) | Ic™2.0mA, Vee=5V 0.55 0.75 Vv Current Gain-Bandwidth Product fr I= 10mA, Vee=6V 125 MHz f=1MHz Output Capacitance Cob Veo=10V, fe=0 46 oF {= 100 MHz me Noise Figure NF Vce=5V, le=0.2mA 6 6B -- . Re=2K0, f=1KHz _ | Tur On Time ton Je 10mA, loy=1,0mA 150 ns - >| Tum Off Time toft Veo=3.6V, leo=1.0mA 800 ns Ri=R,=5KO, R=9900 * Marking . a a ee 8 samsuna SEMICONDUCTOR 4o1