BCX70G SAMSUNG

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 1

Technical content

‘SAMSUNG SEMICONDUCTOR INC a¥e o J 7a64a42 ooOvee0 s ff BCX70G . , NPN- EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR oe re . ‘SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) : tae : Collector-Base Voltage Veeo 45 v | fs Bhs Collector-Emitter Voltage Vero 45 v if Ba ae Emitter-Base Voltage Vso 5 v _ fl 4 Collector Current Ie 200 mA ~ . ‘Collector Dissipation Po 350 mw Storage Temperature Tstg 150 °c * Refer to MMBTS088 for graphs. 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T,=25°C) 7 a t \\ Collector-Emitter Breakdown Voltage | BVcco | lo=2mA, l=0 45 v Emitter-Base Breakdown Voltage BVewo. te=1pA, le=O 6 Vv | Cottector Cutoff Current lees | Vee=32V, Vee=0 20 nA Emitter Cutoff Current eso Vea=4V, Ic=O 20 nA DC Current Gain bre Vee=5V, le=2mA 120 220 Vee=1V, le=5OmA 60 | Collector-Emitter Saturation Voltage | Vee (sat) | b= 10mA, ly=0.25mA 0.36 v | Ik=50mA, I= 1.25mA . 0.55 v Base-Emitter Saturation Voltage Vee (sat) | le=S0mA, lp=0.25mA 06 0.85 v | Ic=50mA, lo=1.25mA 07 1.05 v | Base-Emitter On Voltage Vee (on) | lo=2mA, Vee=SV 0.55 0.75 vee | Current Gain-Bandwidth Product tr Vee=8V, lo=10mA 125 Miz 1=100MHz Output Capacitance Cob Vca™10V, le=0 45 pF t=1MHz . Noise Figure NF Ig=0.2mA, Vee=5V_ 6 dB f=1KHz, Rs=2KQ Turn On Time ton le=10mA, ty= 1A 160 ns Turn Off Time tof la=1mA, Voo=3.6V 800 ns R.=9902, R,=R.=5KO . Marking S [ae ] J J Ky =| LL & SAMSUNG SEMICONDUCTOR 490