BCX69 INFINEON

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Technical content

1 Jul-23-2001

PNP Silicon AF Transistors /G01 For general AF applications /G01 High collector current /G01 High current gain /G01 Low collector-emitter saturation voltage /G01 Complementary type: BCX68 (NPN) VPS05162 Type Marking Pin Configuration Package BCX69 BCX69-10 BCX69-16 BCX69-25 CE CF CG CH 1 = B 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 3 = E SOT89 SOT89 SOT89 SOT89 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 20 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 5 DC collector current IC 1 A Peak collector current ICM 2 Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 130 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 20 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

2 Jul-23-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 V(BR)CEO 20 - - V Collector-base breakdown voltage IC = 10 µA, IB = 0 V(BR)CBO 25 - - Emitter-base breakdown voltage IE = 1 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 25 V, IE = 0 ICBO - - 100 nA Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C ICBO - - 100 µA DC current gain 1) IC = 5 mA, VCE = 10 V hFE 50 - - - DC current gain 1) IC = 500 mA, VCE = 1 V BCX69 BCX69-10 BCX69-16 BCX69-25 hFE 100 160 100 160 250 375 160 250 375 DC current gain 1) IC = 1 A, VCE = 1 V hFE 60 - - Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA VCEsat - - 0.5 V Base-emitter voltage 1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V VBE(ON) 0.6 AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 20 MHz fT - 100 - MHz 1) Pulse test: t ≤=300µs, D = 2%

3 Jul-23-2001

Transition frequency fT = f (IC) VCE = 5V 10 10 10 10 BCX 69 EHP00469 f mA MHz 01 23 5 T 310 102 110 CΙ Total power dissipation Ptot = f(TS) 0 20 40 60 80 100 120 °C 150 TS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 W 1.2 Ptot Collector cutoff current ICBO = f (TA) VCB = 25V 10 0 50 100 150 BCX 69 EHP00471 TA nA ΙCB0 max typ Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00470BCX 69 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp =D T tp T totmax totP DC P pt

4 Jul-23-2001

Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 0 0.4 0.8 BCX 69 EHP00473 VCE sat V mA 10 4 110 10 210 10 310 10 0 0.2 0.6 100 -50 CΙ Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 10 0 0.6 BCX 69 EHP00472 VBE sat mA 100 -50 CΙ Collector current IC = f (VBE) VCE = 1V 10 0 0.6 BCX 69 EHP00474 VBE mA 100 -50 CΙ DC current gain hFE = f (IC) VCE = 1V 10 10 10 10 BCX 69 EHP00475 h mA0 1 34 FE 310 102 010 101 210 100 -50 555 CΙ