BCX54_11 INFINEON

Document overview

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Technical content

NPN Silicon AF Transistors

  • For AF driver and output stages
  • High collector current
  • Low collctor-emitter saturation voltage
  • Complementary types: BCX51...BCX53 (PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101 Type Marking Pin Configuration Package BCX54-16 BCX55 BCX55-16 BCX56 BCX56-10 BCX56-16 BD BE BM BH BK BL 1=B 1=B 1=B 1=B 1=B 1=B 2=C 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E 3=E SOT89 SOT89 SOT89 SOT89 SOT89 SOT89

Parameter Symbol Value Unit Collector-emitter voltage BCX54 BCX55 BCX56 VCEO Collector-base voltage BCX54 BCX55 BCX56 VCBO 100 V Emitter-base voltage VEBO 5 Collector current IC 1 A Peak collector current, tp ≤ 10 ms ICM 1.5 Base current IB 100 mA Peak base current IBM 200 Total power dissipation- TS ≤ 120°C Ptot 2 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 15 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCX54 IC = 10 mA, IB = 0 , BCX55 IC = 10 mA, IB = 0 , BCX56 V(BR)CEO V Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCX54 IC = 100 µA, IE = 0 , BCX55 IC = 100 µA, IE = 0 , BCX56 V(BR)CBO 100 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 °C ICBO 0.1 µA DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V, BCX55/BCX56 IC = 150 mA, VCE = 2 V, BCX55-10/BCX56-10 IC = 150 mA, VCE = 2 V, BCX54-16...BCX56-16 IC = 500 mA, VCE = 2 V hFE 100 100 160 250 160 250 Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat - - 0.5 V Base-emitter voltage- IC = 500 mA, VCE = 2 V VBE(ON) - - 1 AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz fT - 100 - MHz 1Pulse test: t < 300µs; D < 2%

DC current gain hFE = ƒ(IC) VCE = 2 V 10 -1 10 0 10 1 10 2 10 3 1 10 2 10 3 10 25°C -50°C 100°C Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 0 0.4 0.8 BCX 54...56 EHP00449 VCE sat V mA 104 110 10210 10310 100 0.2 0.6 100 -50 CΙ Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 10 10 0 0.6 BCX 54...56 EHP00450 VBE sat mA 100 -50 CΙ Collector current IC = ƒ(VBE) VCE = 2V 10 0 0.6 BCX 54...56 EHP00448 VBE mA 100 -50 CΙ

Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V 10 0 50 100 150 BCX 54...56 EHP00447 TA nA Ι CB0 max typ Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 10 10 10 BCX 54...56 EHP00445 f mA MHz 01 23 5 T 310 102 110 CΙ Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 0.4 0.8 1.2 1.6 W 2.4 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 RthJS D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005

Ptotmax/PtotDC = ƒ(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Package Outline Foot Print Marking Layout (Example) Standard Packing 0.8 0.8 2.0 1.01.2 2.5 0.7 0.45 +0.2 1) Ejector pin markings possible 1.5 3 0.2 -0.1 B 0.25 ±0.05 45˚ 0.15 2.5±0.1 4 ±0.25 M B B 0.15 ±0.10.35 ±0.21 MAX.10˚ 1.5±0.1 ±0.21.6 -0.15 +0.12.75 ±0.14.5 ±0.11 0.2 MAX.1) 123 8 0.2 4.3 1.6 4.6 Pin 1 2005, June Date code (YM) BAW78D Type code Pin 1 Manufacturer

81726 Munich, Germany

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