BCX54 INFINEON

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Technical content

BCX54...BCX56

1 Jul-10-2001

NPN Silicon AF Transistors /G01 For AF driver and output stages /G01 High collector current /G01 Low collector-emitter saturation voltage /G01 Complementary types: BCX51...BCX53 (PNP) VPS05162 Type Marking Pin Configuration Package BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 BA BC BD BE BG BM BH BK BL 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89

BCX54...BCX56

2 Jul-10-2001

Parameter Symbol BCX54 BCX55 BCX56 Unit Collector-emitter voltage VCEO 45 60 80 V Collector-base voltage VCBO 45 60 100 Emitter-base voltage VEBO 5 5 5 A1DC collector current IC Peak collector current 1.5ICM IB 100 mABase current Peak base current IBM 200 Total power dissipation, TS = 130 °C Ptot 1 W 150 °CJunction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 20 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BCX54...BCX56

3 Jul-10-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCX54 BCX55 BCX56 V(BR)CEO V Collector-base breakdown voltage IC = 100 µA, IB = 0 BCX54 BCX55 BCX56 V(BR)CBO 100 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 30 V, IE = 0 ICBO - - 100 nA Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 20 µA DC current gain 1) IC = 5 mA, VCE = 2 V hFE 25 - - - DC current gain 1) IC = 150 mA, VCE = 2 V BCX54...56 hFE-grp.10 hFE-grp.16 hFE 100 100 160 250 160 250 DC current gain 1) IC = 500 mA, VCE = 2 V hFE 25 - - Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat - - 0.5 V Base-emitter voltage 1) IC = 500 mA, VCE = 2 V VBE(ON) - - 1 AC Characteristics fT - 100 - MHzTransition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz 1) Pulse test: t ≤=300µs, D = 2%

BCX54...BCX56

4 Jul-10-2001

Transition frequency fT = f (IC) VCE = 10V 10 10 10 10 BCX 54...56 EHP00445 f mA MHz 01 23 5 T 310 102 110 CΙ Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 0.2 0.4 0.6 0.8 W 1.2 Ptot Collector cutoff current ICBO = f (TA) VCB = 30V 10 0 50 100 150 BCX 54...56 EHP00447 TA nA ΙCB0 max typ Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00446BCX 54...56 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp =D T tp T totmax totP DC P pt

BCX54...BCX56

5 Jul-10-2001

Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 0 0.4 0.8 BCX 54...56 EHP00449 VCE sat V mA 104 110 10210 10310 100 0.2 0.6 100 -50 CΙ Collector current IC = f (VBE) VCE = 2V 10 0 0.6 BCX 54...56 EHP00448 VBE mA 100 -50 CΙ Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 10 0 0.6 BCX 54...56 EHP00450 VBE sat mA 100 -50 CΙ DC current gain hFE = f (IC) VCE = 2V 10 10 10 10 BCX 54...56 EHP00451 h mA-1 0 2 3 FE 310 102 010 101 110 100 -50 555 CΙ