BCX51 INFINEON

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Technical content

BCX51...BCX53 Feb-10-20041 PNP Silicon AF Transistors

  • For AF driver and output stages
  • High collector current
  • Low collector-emitter saturation voltage
  • Complementary types: BCX54...BCX56 (NPN) VPS05162 Type Marking Pin Configuration Package BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53 BCX53-10 BCX53-16 AA AC AD AE AG AM AH AK AL 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E 3 = E SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89

BCX51...BCX53 Feb-10-20042 Maximum Ratings Parameter Symbol BCX51 BCX52 BCX53 Unit Collector-emitter voltage VCEO 45 60 80 V Collector-base voltage VCBO 45 60 100 Emitter-base voltage VEBO 5 5 5 DC collector current IC 1 A 1.5Peak collector current ICM Base current IB mA100 IBM 200Peak base current WPtotTotal power dissipation, TS = 130 °C 1 Junction temperature 150 °CTj Tstg -65 ... 150Storage temperature Thermal Resistance Junction - soldering point1) RthJS ≤20 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BCX51...BCX53 Feb-10-20043 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCX51 BCX52 BCX53 V(BR)CEO V Collector-base breakdown voltage IC = 100 µA, IE = 0 BCX51 BCX52 BCX53 V(BR)CBO 100 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 30 V, IE = 0 ICBO - - 100 nA Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 20 µA DC current gain 1) IC = 5 mA, VCE = 2 V hFE 25 - - - DC current gain 1) IC = 150 mA, VCE = 2 V BCX51...53 hFE-grp.10 hFE-grp.16 hFE 100 100 160 250 160 250 DC current gain 1) I C = 500 mA, VCE = 2 V hFE 25 - - Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat - - 0.5 V Base-emitter voltage 1) IC = 500 mA, VCE = 2 V VBE(ON) - - 1 AC Characteristics - MHzfT -Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz 125 1) Pulse test: t ≤ 300µs, D = 2%

BCX51...BCX53 Feb-10-20044 Collector current IC = f (VBE) VCE = 2V 10 0 0.6 BCX 51...53 EHP00437 VBE mA 100 -50 CΙ Total power dissipation Ptot = f(TS) 0 20 40 60 80 100 120 °C 150 TS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 W 1.2 Ptot Transition frequency fT = f (IC) VCE = 10V 10 10 10 10 BCX 51...53 EHP00439 f mA MHz 01 23 5 T 310 102 110 CΙ Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00438BCX 51...53 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p =D T t p T totmax totP DC P pt

BCX51...BCX53 Feb-10-20045 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 0 0.4 0.8 BCX 51...53 EHP00441 VCE sat V mA 104 110 10210 10310 Ι C 100 0.2 0.6 100 -50 DC current gain hFE = f (IC) VCE = 2V 10 10 10 10 BCX 51...53 EHP00440 h mA0 1 34 FE 310 102 010 101 210 100 -50 555 CΙ Collector cutoff current ICBO = f (TA) VCB = 30V 10 0 50 100 150 BCX 51...53 EHP00442 TA nA Ι CB0 max typ Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 10 0 0.6 BCX 51...53 EHP00443 VBE sat mA 100 -50 CΙ