BCX51BCX53 SIEMENS

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • For AF driver and output stages
  • High collector current
  • Low collector-emitter saturation voltage
  • Complementary types: BCX 54 … BCX 56 (NPN) Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BCX 51 BCX 51-10 BCX 51-16 BCX 52 BCX 52-10 BCX 52-16 BCX 53 BCX 53-10 BCX 53-16 Q62702-C1847 Q62702-C1831 Q62702-C1857 Q62702-C1743 Q62702-C1744 Q62702-C1900 Q62702-C905 Q62702-C1753 Q62702-C1502 AA AC AD AE AG AM AH AK AL SOT-89 1 2 3 B C E 1) For detailed information see chapter Package Outlines.

BCX 51 ... BCX 53 Semiconductor Group 2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 V Peak collector current ICM Collector current IC A Junction temperature Tj ˚C Total power dissipation,TS = 130 ˚CPtot W Storage temperature range Tstg Collector-base voltage VCB0 Thermal Resistance Junction - ambient1) Rth JA ≤ 75 K/W 1.5 150 – 65 … + 150 Emitter-base voltage VEB0 Base current IB mA100 45 60 45 60 BCX 51 BCX 52 Peak base current IBM 200 100 BCX 53 Junction - soldering point Rth JS ≤ 20 1) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.

BCX 51 ... BCX 53 Semiconductor Group 3

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. –DC current gain1) IC = 5 mA,VCE = 2 V IC = 150 mA,VCE = 2 V BCX 51, BCX 52, BCX 53 BCX 51-10, BCX 52-10, BCX 53-10 BCX 51-16, BCX 52-16, BCX 53-16 IC = 500 mA,VCE = 2 V hFE 100 100 160 250 160 250 VCollector-emitter breakdown voltage IC = 10 mA BCX 51 BCX 52 BCX 53 V (BR)CE0 nA µA Collector cutoff current VCB = 30 V VCB = 30 V,TA = 150 ˚C ICB0 100 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 100µA BCX 51 BCX 52 BCX 53 V (BR)CB0 100 Emitter-base breakdown voltage IE = 10µA V(BR)EB0 5–– VCollector-emitter saturation voltage1) IC = 500 mA,IB = 50 mA VCEsat – – 0.5 Base-emitter voltage1) IC = 500 mA,VCE = 2 V VBE ––1 nAEmitter cutoff current VEB = 4 V IEB0 ––2 0 MHzTransition frequency IC = 50 mA,VCE = 10 V,f = 20 MHz fT – 125 – AC characteristics 1) Pulse test:t≤ 300 µs,D = 2 %.

BCX 51 ... BCX 53 Semiconductor Group 4 Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Collector currentIC =f (VBE ) VCE = 2 V Transition frequencyfT = f(IC ) VCE = 10 V

BCX 51 ... BCX 53 Semiconductor Group 5 DC current gainhFE = f(IC ) VCE = 2 V Collector cutoff currentICB0 =f (TA) VCB = 30 V Collector-emitter saturation voltage I C = f(VCEsat) hFE = 10 Base-emitter saturation voltage IC = f(VBEsat) hFE = 10